HSBB3103 Todos los transistores

 

HSBB3103 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HSBB3103
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 29 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 32 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11.2 nS
   Cossⓘ - Capacitancia de salida: 194 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: PRPAK3X3
 

 Búsqueda de reemplazo de HSBB3103 MOSFET

   - Selección ⓘ de transistores por parámetros

 

HSBB3103 Datasheet (PDF)

 ..1. Size:954K  1
hsbb3103.pdf pdf_icon

HSBB3103

HSBB3103 Description Product Summary The HSBB3103 is the high cell density trenched P- VDS -30 V ch MOSFETs, which provide excellent RDSON RDS(ON),max 20 m and gate charge for most of the synchronous buck converter applications. ID -32 A The HSBB3103 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l 100% EAS Guara

 ..2. Size:954K  huashuo
hsbb3103.pdf pdf_icon

HSBB3103

HSBB3103 Description Product Summary The HSBB3103 is the high cell density trenched P- VDS -30 V ch MOSFETs, which provide excellent RDSON RDS(ON),max 20 m and gate charge for most of the synchronous buck converter applications. ID -32 A The HSBB3103 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l 100% EAS Guara

 7.1. Size:923K  1
hsbb3105.pdf pdf_icon

HSBB3103

HSBB3105 Description Product Summary VDS -30 V The HSBB3105 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 14 m gate charge for most of the synchronous buck converter applications. ID -42 A The HSBB3105 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. l 100% EAS Gua

 7.2. Size:923K  huashuo
hsbb3105.pdf pdf_icon

HSBB3103

HSBB3105 Description Product Summary VDS -30 V The HSBB3105 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 14 m gate charge for most of the synchronous buck converter applications. ID -42 A The HSBB3105 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. l 100% EAS Gua

Otros transistores... HSBB3004 , HSBB3016 , HSBB3052 , HSBB3054 , HSBB3056 , HSBB3058 , HSBB3060 , HSBB3062 , IRLB4132 , HSBB3105 , HSBB3115 , HSBB3214 , HSBB4016 , HSBB4052 , HSBB4062 , HSBB4115 , HSBB6056 .

History: 1N80

 

 
Back to Top

 


History: 1N80

HSBB3103
  HSBB3103
  HSBB3103
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AP40H10NF | AP40H04NF | AP40G03NF | AP3P10S | AP3P10MI | AP3P06LI | AP3P06BI | AP3P06AI | AP3N50D | AP3N10BI | AP3N06MI | AP3N06I | AP35H04NF | AP3415A | AP3410MI | SSC8P22CN2

 

 

 
Back to Top

 

Popular searches

2n2926 | ksa992 pinout | 2n1308 transistor | p609 | bc327-40 | tip125 | a992 transistor | 2sa913

 


 
.