All MOSFET. HSBB3103 Datasheet

 

HSBB3103 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSBB3103
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 32 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.5 nC
   trⓘ - Rise Time: 11.2 nS
   Cossⓘ - Output Capacitance: 194 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: PRPAK3X3

 HSBB3103 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSBB3103 Datasheet (PDF)

 ..1. Size:954K  1
 hsbb3103.pdf

HSBB3103 HSBB3103

HSBB3103 Description Product Summary The HSBB3103 is the high cell density trenched P- VDS -30 V ch MOSFETs, which provide excellent RDSON RDS(ON),max 20 m and gate charge for most of the synchronous buck converter applications. ID -32 A The HSBB3103 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l 100% EAS Guara

 ..2. Size:954K  huashuo
 hsbb3103.pdf

HSBB3103 HSBB3103

HSBB3103 Description Product Summary The HSBB3103 is the high cell density trenched P- VDS -30 V ch MOSFETs, which provide excellent RDSON RDS(ON),max 20 m and gate charge for most of the synchronous buck converter applications. ID -32 A The HSBB3103 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l 100% EAS Guara

 7.1. Size:923K  1
 hsbb3105.pdf

HSBB3103 HSBB3103

HSBB3105 Description Product Summary VDS -30 V The HSBB3105 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 14 m gate charge for most of the synchronous buck converter applications. ID -42 A The HSBB3105 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. l 100% EAS Gua

 7.2. Size:923K  huashuo
 hsbb3105.pdf

HSBB3103 HSBB3103

HSBB3105 Description Product Summary VDS -30 V The HSBB3105 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 14 m gate charge for most of the synchronous buck converter applications. ID -42 A The HSBB3105 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. l 100% EAS Gua

 8.1. Size:671K  1
 hsbb3115.pdf

HSBB3103 HSBB3103

HSBB3115 Description Product Summary VDS -30 V The HSBB3115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 7.3 m gate charge for most of the synchronous buck converter applications. ID -55 A The HSBB3115 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. 100% EAS Gu

 8.2. Size:671K  huashuo
 hsbb3115.pdf

HSBB3103 HSBB3103

HSBB3115 Description Product Summary VDS -30 V The HSBB3115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 7.3 m gate charge for most of the synchronous buck converter applications. ID -55 A The HSBB3115 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. 100% EAS Gu

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: MCH3484

 

 
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