Справочник MOSFET. HSBB3103

 

HSBB3103 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: HSBB3103
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 29 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 32 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 11.2 ns
   Cossⓘ - Выходная емкость: 194 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
   Тип корпуса: PRPAK3X3
 

 Аналог (замена) для HSBB3103

   - подбор ⓘ MOSFET транзистора по параметрам

 

HSBB3103 Datasheet (PDF)

 ..1. Size:954K  1
 hsbb3103.pdf pdf_icon

HSBB3103

HSBB3103 Description Product Summary The HSBB3103 is the high cell density trenched P- VDS -30 V ch MOSFETs, which provide excellent RDSON RDS(ON),max 20 m and gate charge for most of the synchronous buck converter applications. ID -32 A The HSBB3103 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l 100% EAS Guara

 ..2. Size:954K  huashuo
 hsbb3103.pdf pdf_icon

HSBB3103

HSBB3103 Description Product Summary The HSBB3103 is the high cell density trenched P- VDS -30 V ch MOSFETs, which provide excellent RDSON RDS(ON),max 20 m and gate charge for most of the synchronous buck converter applications. ID -32 A The HSBB3103 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l 100% EAS Guara

 7.1. Size:923K  1
 hsbb3105.pdf pdf_icon

HSBB3103

HSBB3105 Description Product Summary VDS -30 V The HSBB3105 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 14 m gate charge for most of the synchronous buck converter applications. ID -42 A The HSBB3105 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. l 100% EAS Gua

 7.2. Size:923K  huashuo
 hsbb3105.pdf pdf_icon

HSBB3103

HSBB3105 Description Product Summary VDS -30 V The HSBB3105 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 14 m gate charge for most of the synchronous buck converter applications. ID -42 A The HSBB3105 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. l 100% EAS Gua

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... HSBB3004 , HSBB3016 , HSBB3052 , HSBB3054 , HSBB3056 , HSBB3058 , HSBB3060 , HSBB3062 , 5N60 , HSBB3105 , HSBB3115 , HSBB3214 , HSBB4016 , HSBB4052 , HSBB4062 , HSBB4115 , HSBB6056 .

History: IRF721FI | JFPC13N50C

 

 
Back to Top

 


 
.