HSBB3105 Todos los transistores

 

HSBB3105 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HSBB3105
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 37 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 42 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 73.7 nS
   Cossⓘ - Capacitancia de salida: 310 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
   Paquete / Cubierta: PRPAK3X3
 

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HSBB3105 Datasheet (PDF)

 ..1. Size:923K  1
 hsbb3105.pdf pdf_icon

HSBB3105

HSBB3105 Description Product Summary VDS -30 V The HSBB3105 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 14 m gate charge for most of the synchronous buck converter applications. ID -42 A The HSBB3105 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. l 100% EAS Gua

 ..2. Size:923K  huashuo
 hsbb3105.pdf pdf_icon

HSBB3105

HSBB3105 Description Product Summary VDS -30 V The HSBB3105 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 14 m gate charge for most of the synchronous buck converter applications. ID -42 A The HSBB3105 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. l 100% EAS Gua

 7.1. Size:954K  1
 hsbb3103.pdf pdf_icon

HSBB3105

HSBB3103 Description Product Summary The HSBB3103 is the high cell density trenched P- VDS -30 V ch MOSFETs, which provide excellent RDSON RDS(ON),max 20 m and gate charge for most of the synchronous buck converter applications. ID -32 A The HSBB3103 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l 100% EAS Guara

 7.2. Size:954K  huashuo
 hsbb3103.pdf pdf_icon

HSBB3105

HSBB3103 Description Product Summary The HSBB3103 is the high cell density trenched P- VDS -30 V ch MOSFETs, which provide excellent RDSON RDS(ON),max 20 m and gate charge for most of the synchronous buck converter applications. ID -32 A The HSBB3103 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l 100% EAS Guara

MOSTRAR MÁS

Otros transistores... HSBB3016 , HSBB3052 , HSBB3054 , HSBB3056 , HSBB3058 , HSBB3060 , HSBB3062 , HSBB3103 , AO3400 , HSBB3115 , HSBB3214 , HSBB4016 , HSBB4052 , HSBB4062 , HSBB4115 , HSBB6056 , HSBB6066 .

History: SISS23DN | NCE3008M | 2SK1590 | SWD630 | WST6401 | R6576KNZ1 | TMA7N60H

 

 
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