HSBB3105 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HSBB3105

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 37 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 42 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 73.7 nS

Cossⓘ - Capacitancia de salida: 310 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: PRPAK3X3

 Búsqueda de reemplazo de HSBB3105 MOSFET

- Selecciónⓘ de transistores por parámetros

 

HSBB3105 datasheet

 ..1. Size:923K  1
hsbb3105.pdf pdf_icon

HSBB3105

HSBB3105 Description Product Summary VDS -30 V The HSBB3105 is the high cell density trenched P- ch MOSFETs, which provide excellent RDSON and RDS(ON),max 14 m gate charge for most of the synchronous buck converter applications. ID -42 A The HSBB3105 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. l 100% EAS Gua

 ..2. Size:923K  huashuo
hsbb3105.pdf pdf_icon

HSBB3105

HSBB3105 Description Product Summary VDS -30 V The HSBB3105 is the high cell density trenched P- ch MOSFETs, which provide excellent RDSON and RDS(ON),max 14 m gate charge for most of the synchronous buck converter applications. ID -42 A The HSBB3105 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. l 100% EAS Gua

 7.1. Size:954K  1
hsbb3103.pdf pdf_icon

HSBB3105

HSBB3103 Description Product Summary The HSBB3103 is the high cell density trenched P- VDS -30 V ch MOSFETs, which provide excellent RDSON RDS(ON),max 20 m and gate charge for most of the synchronous buck converter applications. ID -32 A The HSBB3103 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l 100% EAS Guara

 7.2. Size:954K  huashuo
hsbb3103.pdf pdf_icon

HSBB3105

HSBB3103 Description Product Summary The HSBB3103 is the high cell density trenched P- VDS -30 V ch MOSFETs, which provide excellent RDSON RDS(ON),max 20 m and gate charge for most of the synchronous buck converter applications. ID -32 A The HSBB3103 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l 100% EAS Guara

Otros transistores... HSBB3016, HSBB3052, HSBB3054, HSBB3056, HSBB3058, HSBB3060, HSBB3062, HSBB3103, AO3401, HSBB3115, HSBB3214, HSBB4016, HSBB4052, HSBB4062, HSBB4115, HSBB6056, HSBB6066