HSBB3105 - аналоги и даташиты транзистора

 

HSBB3105 - Даташиты. Аналоги. Основные параметры


   Наименование производителя: HSBB3105
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 37 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 42 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 73.7 ns
   Cossⓘ - Выходная емкость: 310 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.014 Ohm
   Тип корпуса: PRPAK3X3
 

 Аналог (замена) для HSBB3105

   - подбор ⓘ MOSFET транзистора по параметрам

 

HSBB3105 Datasheet (PDF)

 ..1. Size:923K  1
 hsbb3105.pdf pdf_icon

HSBB3105

HSBB3105 Description Product Summary VDS -30 V The HSBB3105 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 14 m gate charge for most of the synchronous buck converter applications. ID -42 A The HSBB3105 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. l 100% EAS Gua

 ..2. Size:923K  huashuo
 hsbb3105.pdf pdf_icon

HSBB3105

HSBB3105 Description Product Summary VDS -30 V The HSBB3105 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 14 m gate charge for most of the synchronous buck converter applications. ID -42 A The HSBB3105 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. l 100% EAS Gua

 7.1. Size:954K  1
 hsbb3103.pdf pdf_icon

HSBB3105

HSBB3103 Description Product Summary The HSBB3103 is the high cell density trenched P- VDS -30 V ch MOSFETs, which provide excellent RDSON RDS(ON),max 20 m and gate charge for most of the synchronous buck converter applications. ID -32 A The HSBB3103 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l 100% EAS Guara

 7.2. Size:954K  huashuo
 hsbb3103.pdf pdf_icon

HSBB3105

HSBB3103 Description Product Summary The HSBB3103 is the high cell density trenched P- VDS -30 V ch MOSFETs, which provide excellent RDSON RDS(ON),max 20 m and gate charge for most of the synchronous buck converter applications. ID -32 A The HSBB3103 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l 100% EAS Guara

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... HSBB3016 , HSBB3052 , HSBB3054 , HSBB3056 , HSBB3058 , HSBB3060 , HSBB3062 , HSBB3103 , AO3400 , HSBB3115 , HSBB3214 , HSBB4016 , HSBB4052 , HSBB4062 , HSBB4115 , HSBB6056 , HSBB6066 .

History: JMSH0805PE | IRFS9141 | IRFHM7194 | JMSH0803NGS | HSBB4115 | LNH04R035B | NVTFS052P04M8L

 

 
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