HSBB3105
MOSFET. Datasheet pdf. Equivalent
Type Designator: HSBB3105
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 37
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 42
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 22
nC
trⓘ - Rise Time: 73.7
nS
Cossⓘ -
Output Capacitance: 310
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014
Ohm
Package: PRPAK3X3
HSBB3105
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSBB3105
Datasheet (PDF)
..1. Size:923K 1
hsbb3105.pdf 
HSBB3105 Description Product Summary VDS -30 V The HSBB3105 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 14 m gate charge for most of the synchronous buck converter applications. ID -42 A The HSBB3105 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. l 100% EAS Gua
..2. Size:923K huashuo
hsbb3105.pdf
HSBB3105 Description Product Summary VDS -30 V The HSBB3105 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 14 m gate charge for most of the synchronous buck converter applications. ID -42 A The HSBB3105 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. l 100% EAS Gua
7.1. Size:954K 1
hsbb3103.pdf
HSBB3103 Description Product Summary The HSBB3103 is the high cell density trenched P- VDS -30 V ch MOSFETs, which provide excellent RDSON RDS(ON),max 20 m and gate charge for most of the synchronous buck converter applications. ID -32 A The HSBB3103 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l 100% EAS Guara
7.2. Size:954K huashuo
hsbb3103.pdf
HSBB3103 Description Product Summary The HSBB3103 is the high cell density trenched P- VDS -30 V ch MOSFETs, which provide excellent RDSON RDS(ON),max 20 m and gate charge for most of the synchronous buck converter applications. ID -32 A The HSBB3103 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l 100% EAS Guara
8.1. Size:671K 1
hsbb3115.pdf
HSBB3115 Description Product Summary VDS -30 V The HSBB3115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 7.3 m gate charge for most of the synchronous buck converter applications. ID -55 A The HSBB3115 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. 100% EAS Gu
8.2. Size:671K huashuo
hsbb3115.pdf
HSBB3115 Description Product Summary VDS -30 V The HSBB3115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 7.3 m gate charge for most of the synchronous buck converter applications. ID -55 A The HSBB3115 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. 100% EAS Gu
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