HSBB3115 Todos los transistores

 

HSBB3115 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HSBB3115
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 55 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10.2 nS
   Cossⓘ - Capacitancia de salida: 508 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0087 Ohm
   Paquete / Cubierta: PRPAK3X3
 

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HSBB3115 Datasheet (PDF)

 ..1. Size:671K  1
hsbb3115.pdf pdf_icon

HSBB3115

HSBB3115 Description Product Summary VDS -30 V The HSBB3115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 7.3 m gate charge for most of the synchronous buck converter applications. ID -55 A The HSBB3115 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. 100% EAS Gu

 ..2. Size:671K  huashuo
hsbb3115.pdf pdf_icon

HSBB3115

HSBB3115 Description Product Summary VDS -30 V The HSBB3115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 7.3 m gate charge for most of the synchronous buck converter applications. ID -55 A The HSBB3115 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. 100% EAS Gu

 8.1. Size:923K  1
hsbb3105.pdf pdf_icon

HSBB3115

HSBB3105 Description Product Summary VDS -30 V The HSBB3105 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 14 m gate charge for most of the synchronous buck converter applications. ID -42 A The HSBB3105 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. l 100% EAS Gua

 8.2. Size:954K  1
hsbb3103.pdf pdf_icon

HSBB3115

HSBB3103 Description Product Summary The HSBB3103 is the high cell density trenched P- VDS -30 V ch MOSFETs, which provide excellent RDSON RDS(ON),max 20 m and gate charge for most of the synchronous buck converter applications. ID -32 A The HSBB3103 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l 100% EAS Guara

Otros transistores... HSBB3052 , HSBB3054 , HSBB3056 , HSBB3058 , HSBB3060 , HSBB3062 , HSBB3103 , HSBB3105 , 12N60 , HSBB3214 , HSBB4016 , HSBB4052 , HSBB4062 , HSBB4115 , HSBB6056 , HSBB6066 , HSBB6115 .

History: HSBB3060 | HSBB3004

 

 
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History: HSBB3060 | HSBB3004

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