All MOSFET. HSBB3115 Datasheet

 

HSBB3115 Datasheet and Replacement


   Type Designator: HSBB3115
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 30 nC
   tr ⓘ - Rise Time: 10.2 nS
   Cossⓘ - Output Capacitance: 508 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0087 Ohm
   Package: PRPAK3X3
 

 HSBB3115 substitution

   - MOSFET ⓘ Cross-Reference Search

 

HSBB3115 Datasheet (PDF)

 ..1. Size:671K  1
 hsbb3115.pdf pdf_icon

HSBB3115

HSBB3115 Description Product Summary VDS -30 V The HSBB3115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 7.3 m gate charge for most of the synchronous buck converter applications. ID -55 A The HSBB3115 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. 100% EAS Gu

 ..2. Size:671K  huashuo
 hsbb3115.pdf pdf_icon

HSBB3115

HSBB3115 Description Product Summary VDS -30 V The HSBB3115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 7.3 m gate charge for most of the synchronous buck converter applications. ID -55 A The HSBB3115 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. 100% EAS Gu

 8.1. Size:923K  1
 hsbb3105.pdf pdf_icon

HSBB3115

HSBB3105 Description Product Summary VDS -30 V The HSBB3105 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 14 m gate charge for most of the synchronous buck converter applications. ID -42 A The HSBB3105 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. l 100% EAS Gua

 8.2. Size:954K  1
 hsbb3103.pdf pdf_icon

HSBB3115

HSBB3103 Description Product Summary The HSBB3103 is the high cell density trenched P- VDS -30 V ch MOSFETs, which provide excellent RDSON RDS(ON),max 20 m and gate charge for most of the synchronous buck converter applications. ID -32 A The HSBB3103 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l 100% EAS Guara

SHOW MORE

Datasheet: HSBB3052 , HSBB3054 , HSBB3056 , HSBB3058 , HSBB3060 , HSBB3062 , HSBB3103 , HSBB3105 , SPP20N60C3 , HSBB3214 , HSBB4016 , HSBB4052 , HSBB4062 , HSBB4115 , HSBB6056 , HSBB6066 , HSBB6115 .

Keywords - HSBB3115 MOSFET datasheet

 HSBB3115 cross reference
 HSBB3115 equivalent finder
 HSBB3115 lookup
 HSBB3115 substitution
 HSBB3115 replacement

 

 
Back to Top

 


 
.