HSBB3115 MOSFET Datasheet: P-Ch, 30V, 55A. Full specification with pinout and replacement list

HSBB3115 Specs and Replacement

Type Designator: HSBB3115

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10.2 nS

Cossⓘ - Output Capacitance: 508 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0087 Ohm

Package: PRPAK3X3

HSBB3115 substitution

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HSBB3115 datasheet

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HSBB3115 Description Product Summary VDS -30 V The HSBB3115 is the high cell density trenched P- ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 7.3 m gate charge for most of the synchronous buck converter applications. ID -55 A The HSBB3115 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. 100% EAS Gu... See More ⇒

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hsbb3105.pdf pdf_icon

HSBB3105 Description Product Summary VDS -30 V The HSBB3105 is the high cell density trenched P- ch MOSFETs, which provide excellent RDSON and RDS(ON),max 14 m gate charge for most of the synchronous buck converter applications. ID -42 A The HSBB3105 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. l 100% EAS Gua... See More ⇒

8.2. Size:954K 1
hsbb3103.pdf pdf_icon

HSBB3103 Description Product Summary The HSBB3103 is the high cell density trenched P- VDS -30 V ch MOSFETs, which provide excellent RDSON RDS(ON),max 20 m and gate charge for most of the synchronous buck converter applications. ID -32 A The HSBB3103 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l 100% EAS Guara... See More ⇒