HSBB4115 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HSBB4115
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 52.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 39 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 VQgⓘ - Carga de la puerta: 27.9 nC
trⓘ - Tiempo de subida: 35.2 nS
Cossⓘ - Capacitancia de salida: 323 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
Paquete / Cubierta: PRPAK3X3
Búsqueda de reemplazo de HSBB4115 MOSFET
HSBB4115 Datasheet (PDF)
hsbb4115.pdf

HSBB4115 P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBB4115 is the high cell density trenched VDS -40 V P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 13 m converter applications. ID -39 A The HSBB4115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function relia
hsbb4115.pdf

HSBB4115 P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBB4115 is the high cell density trenched VDS -40 V P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 13 m converter applications. ID -39 A The HSBB4115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function relia
hsbb4052.pdf

HSBB4052 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBB4052 is the high cell density trenched N-VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 6.9 m converter applications. ID 43 A The HSBB4052 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel
hsbb4062.pdf

HSBB4062 N-Ch 40V Fast Switching MOSFETs Features Product Summary Advanced Trench MOS Technology VDS 40 V Low Gate Charge RDS(ON),typ 12.5 m 100% EAS Guaranteed Green Device Available ID 33 A Applications Power Management Functions PRPAK3*3 Pin Configuration DC-DC Converters. Backlighting. Absolute Maximum Ratings Symbol Parameter Ra
Otros transistores... HSBB3062 , HSBB3103 , HSBB3105 , HSBB3115 , HSBB3214 , HSBB4016 , HSBB4052 , HSBB4062 , IRFB3607 , HSBB6056 , HSBB6066 , HSBB6115 , HSBB8008 , HSBE2730 , HSBE2738 , HSBF3202 , HSBG2024 .
History: NCE40H30D | NCEP045N85G | NCE25P60K | WST6045 | STH240N75F3-2 | STB25NM60N-1
History: NCE40H30D | NCEP045N85G | NCE25P60K | WST6045 | STH240N75F3-2 | STB25NM60N-1



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