HSBB4115 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HSBB4115

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 52.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 39 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35.2 nS

Cossⓘ - Capacitancia de salida: 323 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm

Encapsulados: PRPAK3X3

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HSBB4115 datasheet

 ..1. Size:532K  1
hsbb4115.pdf pdf_icon

HSBB4115

HSBB4115 P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBB4115 is the high cell density trenched VDS -40 V P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 13 m converter applications. ID -39 A The HSBB4115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function relia

 ..2. Size:532K  huashuo
hsbb4115.pdf pdf_icon

HSBB4115

HSBB4115 P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBB4115 is the high cell density trenched VDS -40 V P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 13 m converter applications. ID -39 A The HSBB4115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function relia

 9.1. Size:793K  1
hsbb4052.pdf pdf_icon

HSBB4115

HSBB4052 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBB4052 is the high cell density trenched N- VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 6.9 m converter applications. ID 43 A The HSBB4052 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel

 9.2. Size:763K  1
hsbb4062.pdf pdf_icon

HSBB4115

HSBB4062 N-Ch 40V Fast Switching MOSFETs Features Product Summary Advanced Trench MOS Technology VDS 40 V Low Gate Charge RDS(ON),typ 12.5 m 100% EAS Guaranteed Green Device Available ID 33 A Applications Power Management Functions PRPAK3*3 Pin Configuration DC-DC Converters. Backlighting. Absolute Maximum Ratings Symbol Parameter Ra

Otros transistores... HSBB3062, HSBB3103, HSBB3105, HSBB3115, HSBB3214, HSBB4016, HSBB4052, HSBB4062, K4145, HSBB6056, HSBB6066, HSBB6115, HSBB8008, HSBE2730, HSBE2738, HSBF3202, HSBG2024