HSBB4115
MOSFET. Datasheet pdf. Equivalent
Type Designator: HSBB4115
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 52.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 39
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 27.9
nC
trⓘ - Rise Time: 35.2
nS
Cossⓘ -
Output Capacitance: 323
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013
Ohm
Package: PRPAK3X3
HSBB4115
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSBB4115
Datasheet (PDF)
..1. Size:532K 1
hsbb4115.pdf 
HSBB4115 P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBB4115 is the high cell density trenched VDS -40 V P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 13 m converter applications. ID -39 A The HSBB4115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function relia
..2. Size:532K huashuo
hsbb4115.pdf
HSBB4115 P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBB4115 is the high cell density trenched VDS -40 V P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 13 m converter applications. ID -39 A The HSBB4115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function relia
9.1. Size:793K 1
hsbb4052.pdf
HSBB4052 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBB4052 is the high cell density trenched N-VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 6.9 m converter applications. ID 43 A The HSBB4052 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel
9.2. Size:763K 1
hsbb4062.pdf
HSBB4062 N-Ch 40V Fast Switching MOSFETs Features Product Summary Advanced Trench MOS Technology VDS 40 V Low Gate Charge RDS(ON),typ 12.5 m 100% EAS Guaranteed Green Device Available ID 33 A Applications Power Management Functions PRPAK3*3 Pin Configuration DC-DC Converters. Backlighting. Absolute Maximum Ratings Symbol Parameter Ra
9.3. Size:616K 1
hsbb4016.pdf
HSBB4016 Description Product Summary The HSBB4016 is the high cell density trenched N-VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 4.9 m converter applications. ID 40 A The HSBB4016 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. PRPAK3x3 Pin Co
9.4. Size:793K huashuo
hsbb4052.pdf
HSBB4052 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBB4052 is the high cell density trenched N-VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 6.9 m converter applications. ID 43 A The HSBB4052 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel
9.5. Size:763K huashuo
hsbb4062.pdf
HSBB4062 N-Ch 40V Fast Switching MOSFETs Features Product Summary Advanced Trench MOS Technology VDS 40 V Low Gate Charge RDS(ON),typ 12.5 m 100% EAS Guaranteed Green Device Available ID 33 A Applications Power Management Functions PRPAK3*3 Pin Configuration DC-DC Converters. Backlighting. Absolute Maximum Ratings Symbol Parameter Ra
9.6. Size:616K huashuo
hsbb4016.pdf
HSBB4016 Description Product Summary The HSBB4016 is the high cell density trenched N-VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 4.9 m converter applications. ID 40 A The HSBB4016 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. PRPAK3x3 Pin Co
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