HSBB4115 MOSFET Datasheet: P-Ch, 40V, 39A. Full specification with pinout and replacement list

HSBB4115 Specs and Replacement

   Type Designator: HSBB4115
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 52.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 39 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 35.2 nS
   Cossⓘ - Output Capacitance: 323 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: PRPAK3X3

HSBB4115 substitution

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HSBB4115 datasheet

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HSBB4115 P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBB4115 is the high cell density trenched VDS -40 V P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 13 m converter applications. ID -39 A The HSBB4115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function relia... See More ⇒

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HSBB4052 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBB4052 is the high cell density trenched N- VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 6.9 m converter applications. ID 43 A The HSBB4052 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel... See More ⇒

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HSBB4062 N-Ch 40V Fast Switching MOSFETs Features Product Summary Advanced Trench MOS Technology VDS 40 V Low Gate Charge RDS(ON),typ 12.5 m 100% EAS Guaranteed Green Device Available ID 33 A Applications Power Management Functions PRPAK3*3 Pin Configuration DC-DC Converters. Backlighting. Absolute Maximum Ratings Symbol Parameter Ra... See More ⇒