HSCB2307 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HSCB2307

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 31 nS

Cossⓘ - Capacitancia de salida: 489 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm

Encapsulados: DFN2X2-6L

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HSCB2307 datasheet

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 hscb2307.pdf pdf_icon

HSCB2307

HSCB2307 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSCB2307 is the high cell density trenched P- VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 15 m converter applications. ID -8 A The HSCB2307 meet the RoHS and Green Product requirement with full function reliability approved.

 9.1. Size:1246K  huashuo
 hscb2012.pdf pdf_icon

HSCB2307

HSCB2012 N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSCB2012 is the high cell density trenched N- VDS 20 V ch MOSFETs, which provides excellent RDSON RDS(ON),typ 12 m and efficiency for most of the small power switching and load switch applications. ID 12 A The HSCB2012 meet the RoHS and Green Product requirement with full function reliability appro

 9.2. Size:1039K  huashuo
 hscb2016.pdf pdf_icon

HSCB2307

HSCB2016 N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSCB2016 is the high cell density trenched N- V 20 V DS ch MOSFETs, which provides excellent RDSON R 9 m DS(ON),typ and efficiency for most of the small power switching and load switch applications. I 16 A D The HSCB2016 meet the RoHS and Green Product requirement with full function reliability

 9.3. Size:830K  huashuo
 hscb20d03.pdf pdf_icon

HSCB2307

HSCB20D03 20V Dual P-CH Fast Switching MOSFETs Product Summary Description The HSCB20D03 is the high cell density trenched V -20 V DS P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching R 90 m DS(ON),typ and load switch applications. I The HSCB20D03 meets the RoHS and Green D -3 A Product requirement with full function re

MOSTRAR MÁS

Otros transistores... HSBF3202, HSBG2024, HSBG2103, HSCA2030, HSCB1216, HSCB2012, HSCB2016, HSCB20D03, AO4407, HSCB3010, HSCC2734, HSCC8204, HSCC8211, HSCC8233, HSCE2530, HSCE2631, HSCE6032