HSCB2307 MOSFET Datasheet: P-Ch, 20V, 8A. Full specification with pinout and replacement list

HSCB2307 Specs and Replacement

   Type Designator: HSCB2307
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 489 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: DFN2X2-6L

HSCB2307 substitution

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HSCB2307 datasheet

..1. Size:1125K huashuo
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HSCB2307 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSCB2307 is the high cell density trenched P- VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 15 m converter applications. ID -8 A The HSCB2307 meet the RoHS and Green Product requirement with full function reliability approved. ... See More ⇒

9.1. Size:1246K huashuo
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HSCB2012 N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSCB2012 is the high cell density trenched N- VDS 20 V ch MOSFETs, which provides excellent RDSON RDS(ON),typ 12 m and efficiency for most of the small power switching and load switch applications. ID 12 A The HSCB2012 meet the RoHS and Green Product requirement with full function reliability appro... See More ⇒

9.2. Size:1039K huashuo
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HSCB2016 N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSCB2016 is the high cell density trenched N- V 20 V DS ch MOSFETs, which provides excellent RDSON R 9 m DS(ON),typ and efficiency for most of the small power switching and load switch applications. I 16 A D The HSCB2016 meet the RoHS and Green Product requirement with full function reliability ... See More ⇒

9.3. Size:830K huashuo
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HSCB20D03 20V Dual P-CH Fast Switching MOSFETs Product Summary Description The HSCB20D03 is the high cell density trenched V -20 V DS P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching R 90 m DS(ON),typ and load switch applications. I The HSCB20D03 meets the RoHS and Green D -3 A Product requirement with full function re... See More ⇒

Detailed specifications: HSBF3202 , HSBG2024 , HSBG2103 , HSCA2030 , HSCB1216 , HSCB2012 , HSCB2016 , HSCB20D03 , AO4407 , HSCB3010 , HSCC2734 , HSCC8204 , HSCC8211 , HSCC8233 , HSCE2530 , HSCE2631 , HSCE6032 .