HSP15810C Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HSP15810C

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 227 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 609 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm

Encapsulados: TO220

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HSP15810C datasheet

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 hsp15810c.pdf pdf_icon

HSP15810C

HSP15810C N-Ch 100V Fast Switching MOSFETs Product Summary General Description V 100% EAS Guaranteed DS 100 V Green Device Available R 4.7 m DS(ON),typ Super Low RDS (ON) Advanced high cell density Trench I 120 A D technology TO220 Pin Configuration Applications MOTOR Driver. BMS. High frequency switching and synchronous recti

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 hsp150n02.pdf pdf_icon

HSP15810C

HSP150N02 N-Ch 150V Fast Switching MOSFETs Description Product Summary The HSP150N02 is the highest performance VDS 150 V trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate RDS(ON),typ 12 m charge for most of the synchronous buck ID 120 A converter applications. The HSP150N02 meet the RoHS and Green Product requirement, 100% EA

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 hsp150n15.pdf pdf_icon

HSP15810C

HSP150N15 N-Ch 150V Fast Switching MOSFETs Description Product Summary VDS 150 V The HSP150N15 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON RDS(ON),TYP 5 m and gate charge for most of the synchronous buck converter applications. ID 150 A The HSP150N15 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function

Otros transistores... HSP0018A, HSP0024A, HSP0048, HSP0115, HSP0139, HSP120N08, HSP150N02, HSP150N15, IRF1010E, HSP18N20, HSP200N02, HSP3018B, HSP3105, HSP4024A, HSP4048, HSP6016, HSP6024A