HSP15810C Datasheet and Replacement
Type Designator: HSP15810C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 227 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 609 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO220
HSP15810C substitution
HSP15810C Datasheet (PDF)
hsp15810c.pdf

HSP15810C N-Ch 100V Fast Switching MOSFETs Product Summary General Description V 100% EAS Guaranteed DS 100 V Green Device Available R 4.7 m DS(ON),typ Super Low RDS (ON) Advanced high cell density Trench I 120 A D technology TO220 Pin Configuration Applications MOTOR Driver. BMS. High frequency switching and synchronous recti
hsp150n02.pdf

HSP150N02 N-Ch 150V Fast Switching MOSFETs Description Product Summary The HSP150N02 is the highest performance VDS 150 V trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate RDS(ON),typ 12 m charge for most of the synchronous buck ID 120 A converter applications. The HSP150N02 meet the RoHS and Green Product requirement, 100% EA
hsp150n15.pdf

HSP150N15 N-Ch 150V Fast Switching MOSFETs Description Product Summary VDS 150 V The HSP150N15 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON RDS(ON),TYP 5 m and gate charge for most of the synchronous buck converter applications. ID 150 A The HSP150N15 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function
Datasheet: HSP0018A , HSP0024A , HSP0048 , HSP0115 , HSP0139 , HSP120N08 , HSP150N02 , HSP150N15 , IRF530 , HSP18N20 , HSP200N02 , HSP3018B , HSP3105 , HSP4024A , HSP4048 , HSP6016 , HSP6024A .
History: KF1N60D | FTF16N06G | 2SK412 | PTP9506E | 2SK749 | KF4N20LD | STF3LN80K5
Keywords - HSP15810C MOSFET datasheet
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History: KF1N60D | FTF16N06G | 2SK412 | PTP9506E | 2SK749 | KF4N20LD | STF3LN80K5



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