HSU12N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HSU12N10
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 28 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3 nS
Cossⓘ - Capacitancia de salida: 20 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.105 Ohm
Paquete / Cubierta: TO252
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HSU12N10 Datasheet (PDF)
hsu12n10.pdf

HSU12N10 N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSU12N10 is the highest performance trench N-ch MOSFETs with extreme high cell density, RDS(ON),TYP 93 m which provide excellent RDSON and gate charge for most of the synchronous buck converter ID 12 A applications . The HSU12N10 meet the RoHS and Green Product requirement, 100% EAS gua
hsu1241.pdf

HSU1241 N-Ch 40V Fast Switching MOSFETs Product Summary Description The HSU1241 is the high cell density trenched N- VDS 40 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 16.5 m gate charge for most of the synchronous buck converter applications. ID 40 A The HSU1241 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabi
Otros transistores... HSU0004 , HSU0018A , HSU0026 , HSU0048 , HSU0115 , HSU0139 , HSU100P03 , HSU1241 , IRF640N , HSU150N03 , HSU16N25 , HSU18N20 , HSU20N15A , HSU3006 , HSU3014 , HSU3016 , HSU3018B .
History: OSG55R380DF | IRFH5106PBF | IRFS840A | IRFHM9391 | AM7306NA | IRFS821
History: OSG55R380DF | IRFH5106PBF | IRFS840A | IRFHM9391 | AM7306NA | IRFS821



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