HSU12N10 Specs and Replacement

Type Designator: HSU12N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm

Package: TO252

HSU12N10 substitution

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HSU12N10 datasheet

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HSU12N10

HSU12N10 N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSU12N10 is the highest performance trench N-ch MOSFETs with extreme high cell density, RDS(ON),TYP 93 m which provide excellent RDSON and gate charge for most of the synchronous buck converter ID 12 A applications . The HSU12N10 meet the RoHS and Green Product requirement, 100% EAS gua... See More ⇒

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HSU12N10

HSU1241 N-Ch 40V Fast Switching MOSFETs Product Summary Description The HSU1241 is the high cell density trenched N- VDS 40 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 16.5 m gate charge for most of the synchronous buck converter applications. ID 40 A The HSU1241 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabi... See More ⇒

Detailed specifications: HSU0004, HSU0018A, HSU0026, HSU0048, HSU0115, HSU0139, HSU100P03, HSU1241, IRFB4110, HSU150N03, HSU16N25, HSU18N20, HSU20N15A, HSU3006, HSU3014, HSU3016, HSU3018B

Keywords - HSU12N10 MOSFET specs

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