HSU12N10 Datasheet and Replacement
Type Designator: HSU12N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 20 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
Package: TO252
HSU12N10 substitution
HSU12N10 Datasheet (PDF)
hsu12n10.pdf

HSU12N10 N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSU12N10 is the highest performance trench N-ch MOSFETs with extreme high cell density, RDS(ON),TYP 93 m which provide excellent RDSON and gate charge for most of the synchronous buck converter ID 12 A applications . The HSU12N10 meet the RoHS and Green Product requirement, 100% EAS gua
hsu1241.pdf

HSU1241 N-Ch 40V Fast Switching MOSFETs Product Summary Description The HSU1241 is the high cell density trenched N- VDS 40 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 16.5 m gate charge for most of the synchronous buck converter applications. ID 40 A The HSU1241 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabi
Datasheet: HSU0004 , HSU0018A , HSU0026 , HSU0048 , HSU0115 , HSU0139 , HSU100P03 , HSU1241 , IRF640N , HSU150N03 , HSU16N25 , HSU18N20 , HSU20N15A , HSU3006 , HSU3014 , HSU3016 , HSU3018B .
History: SVS70R360SE3 | OSG55R290AF | RDX045N60FU6 | PK615BM6 | EKI04036 | SVS70R360FJDE3 | OSG55R160PZF
Keywords - HSU12N10 MOSFET datasheet
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History: SVS70R360SE3 | OSG55R290AF | RDX045N60FU6 | PK615BM6 | EKI04036 | SVS70R360FJDE3 | OSG55R160PZF



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