IXFP34N65X2M MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXFP34N65X2M datasheet

..1. Size:138K ixys
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Preliminary Technical Information X2-Class HiperFETTM VDSS = 650V IXFP34N65X2M Power MOSFET ID25 = 34A RDS(on) 100m (Electrically Isolated Tab) N-Channel Enhancement Mode OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 650 V G Isolated Tab D VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S VGSS Contin

3.1. Size:282K ixys
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X2-Class HiPerFETTM VDSS = 650V IXFP34N65X2 Power MOSFET ID25 = 34A IXFH34N65X2 RDS(on) 100m N-Channel Enhancement Mode Avalanche Rated TO-220 (IXFP) Symbol Test Conditions Maximum Ratings G D VDSS TJ = 25 C to 150 C 650 V S D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V TO-247 VGSS Continuous 30 V (IXFH) VGSM Transien

3.2. Size:205K ixys
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X2-Class HiPerFETTM VDSS = 650V IXFA34N65X2 Power MOSFET ID25 = 34A IXFP34N65X2 RDS(on) 100m IXFH34N65X2 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGS

3.3. Size:205K inchange semiconductor
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFP34N65X2 FEATURES With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS V Ga

Otros transistores... IXFA60N25X3 , IXFA80N25X3 , IXFH18N65X2 , IXFH40N85X , IXFH50N85X , IXFH90N20X3 , IXFK50N85X , IXFK80N65X2 , IRFB3607 , IXFP60N25X3 , IXFP80N25X3 , IXFP90N20X3 , IXFQ60N25X3 , IXFQ80N25X3 , IXFQ90N20X3 , IXFT40N85XHV , IXFT50N85XHV .