IXFP34N65X2M PDF and Equivalents Search

 

IXFP34N65X2M Specs and Replacement

Type Designator: IXFP34N65X2M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 34 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 2000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO220

IXFP34N65X2M substitution

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IXFP34N65X2M datasheet

 ..1. Size:138K  ixys
 ixfp34n65x2m.pdf pdf_icon

IXFP34N65X2M

Preliminary Technical Information X2-Class HiperFETTM VDSS = 650V IXFP34N65X2M Power MOSFET ID25 = 34A RDS(on) 100m (Electrically Isolated Tab) N-Channel Enhancement Mode OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 650 V G Isolated Tab D VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S VGSS Contin... See More ⇒

 3.1. Size:282K  ixys
 ixfp34n65x2 ixfh34n65x2.pdf pdf_icon

IXFP34N65X2M

X2-Class HiPerFETTM VDSS = 650V IXFP34N65X2 Power MOSFET ID25 = 34A IXFH34N65X2 RDS(on) 100m N-Channel Enhancement Mode Avalanche Rated TO-220 (IXFP) Symbol Test Conditions Maximum Ratings G D VDSS TJ = 25 C to 150 C 650 V S D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V TO-247 VGSS Continuous 30 V (IXFH) VGSM Transien... See More ⇒

 3.2. Size:205K  ixys
 ixfa34n65x2 ixfp34n65x2 ixfh34n65x2.pdf pdf_icon

IXFP34N65X2M

X2-Class HiPerFETTM VDSS = 650V IXFA34N65X2 Power MOSFET ID25 = 34A IXFP34N65X2 RDS(on) 100m IXFH34N65X2 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGS... See More ⇒

 3.3. Size:205K  inchange semiconductor
 ixfp34n65x2.pdf pdf_icon

IXFP34N65X2M

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFP34N65X2 FEATURES With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS V Ga... See More ⇒

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Detailed specifications: IXFA60N25X3, IXFA80N25X3, IXFH18N65X2, IXFH40N85X, IXFH50N85X, IXFH90N20X3, IXFK50N85X, IXFK80N65X2, IRFB3607, IXFP60N25X3, IXFP80N25X3, IXFP90N20X3, IXFQ60N25X3, IXFQ80N25X3, IXFQ90N20X3, IXFT40N85XHV, IXFT50N85XHV

Keywords - IXFP34N65X2M MOSFET specs

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