IXFH80N25X3 Todos los transistores

 ..1. Size:245K  ixys
 ixfa80n25x3 ixfp80n25x3 ixfq80n25x3 ixfh80n25x3.pdf

Preliminary Technical Information X3-Class HiPerFETTM VDSS = 250V IXFA80N25X3 Power MOSFET ID25 = 80A IXFP80N25X3 RDS(on) 16m IXFQ80N25X3 TO-263 AA (IXFA) IXFH80N25X3 N-Channel Enhancement Mode Avalanche Rated G S Fast Intrinsic Diode D (Tab) TO-220AB (IXFP) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C250D S D (Tab) V TO-3P (IXFQ) VDGR

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 ixfh80n20q ixfk80n20q ixft80n20q.pdf

IXFH 80N20Q HiPerFETTM VDSS = 200 V IXFK 80N20Q Power MOSFETs ID25 = 80 A IXFT 80N20Q Q-Class RDS(on) = 28 mW trr 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 200 V (TAB) VGS Continuous 20 V VGSM Transi

 7.1. Size:52K  ixys
 ixfh80n10q ixft80n10q.pdf

IXFH 80N10Q VDSS = 100 V HiPerFETTM IXFT 80N10Q ID25 = 80 A Power MOSFETs RDS(on) = 15 mW Q-Class trr 200ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary data TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 100 V VGS Continuous 20 V VGSM Trans

 7.2. Size:114K  ixys
 ixfh80n65x2.pdf

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFH80N65X2 Power MOSFET ID25 = 80A RDS(on) 40m N-Channel Enhancement Mode Avalanche Rated TO-247 Fast Intrinsic Diode G D S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 650 V G = Gate D = Drain VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S =

 7.3. Size:54K  ixys
 ixfh80n085 ixft80n085.pdf

IXFH 80N085 VDSS = 85 V HiPerFETTM IXFT 80N085 ID25 = 80 A Power MOSFETs RDS(on) = 9 mW N-Channel Enhancement Mode trr 200 ns Avalanche Rated, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C85 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 85 V VGS Continuous 20 V VGSM Transient 30 V (TAB) ID25 TC = 25 C80 A IL

 7.4. Size:211K  ixys
 ixfh80n65x2 ixfk80n65x2.pdf

 7.5. Size:261K  inchange semiconductor
 ixfh80n65x2.pdf

isc N-Channel MOSFET Transistor IXFH80N65X2 FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS V G