IXFH80N25X3 MOSFET Datasheet: N-Ch, 250V, 80A. Full specification with pinout and replacement list

IXFH80N25X3 Specs and Replacement

   Type Designator: IXFH80N25X3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 390 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 890 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO247

IXFH80N25X3 substitution

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IXFH80N25X3 datasheet

..1. Size:245K ixys
ixfa80n25x3 ixfp80n25x3 ixfq80n25x3 ixfh80n25x3.pdf pdf_icon

Preliminary Technical Information X3-Class HiPerFETTM VDSS = 250V IXFA80N25X3 Power MOSFET ID25 = 80A IXFP80N25X3 RDS(on) 16m IXFQ80N25X3 TO-263 AA (IXFA) IXFH80N25X3 N-Channel Enhancement Mode Avalanche Rated G S Fast Intrinsic Diode D (Tab) TO-220AB (IXFP) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C250D S D (Tab) V TO-3P (IXFQ) VDGR... See More ⇒

6.1. Size:70K ixys
ixfh80n20q ixfk80n20q ixft80n20q.pdf pdf_icon

IXFH 80N20Q HiPerFETTM VDSS = 200 V IXFK 80N20Q Power MOSFETs ID25 = 80 A IXFT 80N20Q Q-Class RDS(on) = 28 mW trr 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 200 V (TAB) VGS Continuous 20 V VGSM Transi... See More ⇒

7.1. Size:52K ixys
ixfh80n10q ixft80n10q.pdf pdf_icon

IXFH 80N10Q VDSS = 100 V HiPerFETTM IXFT 80N10Q ID25 = 80 A Power MOSFETs RDS(on) = 15 mW Q-Class trr 200ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary data TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 100 V VGS Continuous 20 V VGSM Trans... See More ⇒

7.2. Size:114K ixys
ixfh80n65x2.pdf pdf_icon

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFH80N65X2 Power MOSFET ID25 = 80A RDS(on) 40m N-Channel Enhancement Mode Avalanche Rated TO-247 Fast Intrinsic Diode G D S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 650 V G = Gate D = Drain VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S =... See More ⇒