AUIRLS8409-7P Todos los transistores

 

AUIRLS8409-7P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AUIRLS8409-7P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 375 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 240 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 71 nS
   Cossⓘ - Capacitancia de salida: 1990 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00075 Ohm
   Paquete / Cubierta: D2PAK-7PIN
     - Selección de transistores por parámetros

 

AUIRLS8409-7P Datasheet (PDF)

 ..1. Size:273K  infineon
auirls8409-7p.pdf pdf_icon

AUIRLS8409-7P

AUIRLS8409-7P Features VDSS 40V Advanced Process Technology RDS(on) typ. 0.50m Logic Level Gate Drive max. Ultra Low On-Resistance 0.75m 175C Operating Temperature ID (Silicon Limited) 500A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *

 8.1. Size:264K  international rectifier
auirlsl4030.pdf pdf_icon

AUIRLS8409-7P

PD - 96406BAUTOMOTIVE GRADEAUIRLS4030FeaturesAUIRLSL4030l Optimized for Logic Level DriveHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS100Vl 175C Operating TemperatureRDS(on) typ.l Fast Switching 3.4ml Repetitive Avalanche Allowed up to TjmaxG max. 4.3ml Lead-Free, RoHS Compliantl Automotive Qualified *ID 180A

 8.2. Size:238K  international rectifier
auirls3114z.pdf pdf_icon

AUIRLS8409-7P

PD - 96412AUTOMOTIVE GRADEAUIRLS3114ZHEXFET Power MOSFETFeaturesVDSS40VDl Advanced Process TechnologyRDS(on) typ.l Ultra Low On-Resistance 3.8ml Enhanced dV/dT and dI/dT capability max. 4.9ml 175C Operating TemperatureGl Fast Switching ID (Silicon Limited) 122Al Repetitive Avalanche Allowed up to TjmaxSID (Wirebond Limited)56A l Lead-Free, RoHS

 8.3. Size:288K  international rectifier
auirls3036.pdf pdf_icon

AUIRLS8409-7P

AUTOMOTIVE GRADEAUIRLS3036HEXFET Power MOSFETFeatures Advanced Process TechnologyDVDSS 60V Ultra Low On-ResistanceRDS(on) typ.1.9m Logic Level Gate Drive Dynamic dv/dt Ratingmax. 2.4mG 175C Operating TemperatureID (Silicon Limited) 270A Fast SwitchingID (Package Limited)S 195A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: VS3620DP-G | 2SJ152

 

 
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