All MOSFET. AUIRLS8409-7P Datasheet

 

AUIRLS8409-7P Datasheet and Replacement


   Type Designator: AUIRLS8409-7P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 240 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 71 nS
   Cossⓘ - Output Capacitance: 1990 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00075 Ohm
   Package: D2PAK-7PIN
 

 AUIRLS8409-7P substitution

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AUIRLS8409-7P Datasheet (PDF)

 ..1. Size:273K  infineon
auirls8409-7p.pdf pdf_icon

AUIRLS8409-7P

AUIRLS8409-7P Features VDSS 40V Advanced Process Technology RDS(on) typ. 0.50m Logic Level Gate Drive max. Ultra Low On-Resistance 0.75m 175C Operating Temperature ID (Silicon Limited) 500A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *

 8.1. Size:264K  international rectifier
auirlsl4030.pdf pdf_icon

AUIRLS8409-7P

PD - 96406BAUTOMOTIVE GRADEAUIRLS4030FeaturesAUIRLSL4030l Optimized for Logic Level DriveHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS100Vl 175C Operating TemperatureRDS(on) typ.l Fast Switching 3.4ml Repetitive Avalanche Allowed up to TjmaxG max. 4.3ml Lead-Free, RoHS Compliantl Automotive Qualified *ID 180A

 8.2. Size:238K  international rectifier
auirls3114z.pdf pdf_icon

AUIRLS8409-7P

PD - 96412AUTOMOTIVE GRADEAUIRLS3114ZHEXFET Power MOSFETFeaturesVDSS40VDl Advanced Process TechnologyRDS(on) typ.l Ultra Low On-Resistance 3.8ml Enhanced dV/dT and dI/dT capability max. 4.9ml 175C Operating TemperatureGl Fast Switching ID (Silicon Limited) 122Al Repetitive Avalanche Allowed up to TjmaxSID (Wirebond Limited)56A l Lead-Free, RoHS

 8.3. Size:288K  international rectifier
auirls3036.pdf pdf_icon

AUIRLS8409-7P

AUTOMOTIVE GRADEAUIRLS3036HEXFET Power MOSFETFeatures Advanced Process TechnologyDVDSS 60V Ultra Low On-ResistanceRDS(on) typ.1.9m Logic Level Gate Drive Dynamic dv/dt Ratingmax. 2.4mG 175C Operating TemperatureID (Silicon Limited) 270A Fast SwitchingID (Package Limited)S 195A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

Datasheet: IXFQ90N20X3 , IXFT40N85XHV , IXFT50N85XHV , IXFH80N25X3 , IXTH240N15X4 , IXTP34N65X2 , IXTT240N15X4HV , AIMW120R045M1 , 5N65 , BF2040 , BF2040R , BF2040W , BSC007N04LS6 , BSC010N04LS6 , BSC010N04LST , BSC011N03LST , BSC014N06NSSC .

History: SSM6K25FE | ELM5H1072A | AP3A010MT | IXTL2X240N055T | CHM8206JGP | SM7302ESKP | HGP480N15M

Keywords - AUIRLS8409-7P MOSFET datasheet

 AUIRLS8409-7P cross reference
 AUIRLS8409-7P equivalent finder
 AUIRLS8409-7P lookup
 AUIRLS8409-7P substitution
 AUIRLS8409-7P replacement

 

 
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