AUIRLS8409-7P PDF and Equivalents Search

 

AUIRLS8409-7P Specs and Replacement

Type Designator: AUIRLS8409-7P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 240 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 71 nS

Cossⓘ - Output Capacitance: 1990 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00075 Ohm

Package: D2PAK-7PIN

AUIRLS8409-7P substitution

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AUIRLS8409-7P datasheet

 ..1. Size:273K  infineon
auirls8409-7p.pdf pdf_icon

AUIRLS8409-7P

AUIRLS8409-7P Features VDSS 40V Advanced Process Technology RDS(on) typ. 0.50m Logic Level Gate Drive max. Ultra Low On-Resistance 0.75m 175 C Operating Temperature ID (Silicon Limited) 500A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * ... See More ⇒

 8.1. Size:264K  international rectifier
auirlsl4030.pdf pdf_icon

AUIRLS8409-7P

PD - 96406B AUTOMOTIVE GRADE AUIRLS4030 Features AUIRLSL4030 l Optimized for Logic Level Drive HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS 100V l 175 C Operating Temperature RDS(on) typ. l Fast Switching 3.4m l Repetitive Avalanche Allowed up to Tjmax G max. 4.3m l Lead-Free, RoHS Compliant l Automotive Qualified * ID 180A ... See More ⇒

 8.2. Size:238K  international rectifier
auirls3114z.pdf pdf_icon

AUIRLS8409-7P

PD - 96412 AUTOMOTIVE GRADE AUIRLS3114Z HEXFET Power MOSFET Features VDSS 40V D l Advanced Process Technology RDS(on) typ. l Ultra Low On-Resistance 3.8m l Enhanced dV/dT and dI/dT capability max. 4.9m l 175 C Operating Temperature G l Fast Switching ID (Silicon Limited) 122A l Repetitive Avalanche Allowed up to Tjmax S ID (Wirebond Limited) 56A l Lead-Free, RoHS ... See More ⇒

 8.3. Size:288K  international rectifier
auirls3036.pdf pdf_icon

AUIRLS8409-7P

AUTOMOTIVE GRADE AUIRLS3036 HEXFET Power MOSFET Features Advanced Process Technology D VDSS 60V Ultra Low On-Resistance RDS(on) typ. 1.9m Logic Level Gate Drive Dynamic dv/dt Rating max. 2.4m G 175 C Operating Temperature ID (Silicon Limited) 270A Fast Switching ID (Package Limited) S 195A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ... See More ⇒

Detailed specifications: IXFQ90N20X3, IXFT40N85XHV, IXFT50N85XHV, IXFH80N25X3, IXTH240N15X4, IXTP34N65X2, IXTT240N15X4HV, AIMW120R045M1, 2SK3568, BF2040, BF2040R, BF2040W, BSC007N04LS6, BSC010N04LS6, BSC010N04LST, BSC011N03LST, BSC014N06NSSC

Keywords - AUIRLS8409-7P MOSFET specs

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