BSC007N04LS6 Todos los transistores

 ..1. Size:1552K  infineon
 bsc007n04ls6.pdf

BSC007N04LS6 MOSFET TDSON-8 FL (enlarged source interconnection) OptiMOSTM 6 Power-Transistor, 40 V 8 7 6 Features 5 Optimized for synchronous application Very low on-resistance R DS(on) 1 5 2 6 100% avalanche tested 7 3 4 8 Superior thermal resistance N-channel 4 Pb-free lead plating; RoHS compliant 3 Halogen-free according to IEC61249-2-21 2

 9.1. Size:1528K  infineon
 bsc009ne2ls5i.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-MOSFET, 25 V BSC009NE2LS5I Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-MOSFET, 25 V BSC009NE2LS5I SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance buck converters Monolithic integrated Schottky like diode Very low on

 9.2. Size:1502K  infineon
 bsc009ne2ls5.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-MOSFET, 25 V BSC009NE2LS5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-MOSFET, 25 V BSC009NE2LS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance buck converters Very low on-resistance R @ V =4.5 V DS(on) GS 100% ava

 9.3. Size:693K  infineon
 bsc009ne2ls.pdf

BSC009NE2LS OptiMOSTM Power-MOSFET Product Summary Features VDS 25 V Optimized for e-fuse and ORing application RDS(on),max 0.9 mW Very low on-resistance R @ V =4.5 V DS(on) GS ID 100 A 100% avalanche tested QOSS 38 nC Superior thermal resistance QG(0V..10V) 126 nC N-channel Qualified according to JEDEC1) for target applications PG-TDSON-8 P