BSC007N04LS6 MOSFET Datasheet: N-Ch, 40V, 48A. Full specification with pinout and replacement list

BSC007N04LS6 Specs and Replacement

Type Designator: BSC007N04LS6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 48 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 2100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0007 Ohm

Package: SUPERSO8

BSC007N04LS6 substitution

- MOSFET ⓘ Cross-Reference Search

BSC007N04LS6 datasheet

..1. Size:1552K infineon
bsc007n04ls6.pdf pdf_icon

BSC007N04LS6 MOSFET TDSON-8 FL (enlarged source interconnection) OptiMOSTM 6 Power-Transistor, 40 V 8 7 6 Features 5 Optimized for synchronous application Very low on-resistance R DS(on) 1 5 2 6 100% avalanche tested 7 3 4 8 Superior thermal resistance N-channel 4 Pb-free lead plating; RoHS compliant 3 Halogen-free according to IEC61249-2-21 2 ... See More ⇒

9.1. Size:1528K infineon
bsc009ne2ls5i.pdf pdf_icon

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-MOSFET, 25 V BSC009NE2LS5I Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-MOSFET, 25 V BSC009NE2LS5I SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance buck converters Monolithic integrated Schottky like diode Very low on... See More ⇒

9.2. Size:1502K infineon
bsc009ne2ls5.pdf pdf_icon

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-MOSFET, 25 V BSC009NE2LS5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-MOSFET, 25 V BSC009NE2LS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance buck converters Very low on-resistance R @ V =4.5 V DS(on) GS 100% ava... See More ⇒

9.3. Size:693K infineon
bsc009ne2ls.pdf pdf_icon

BSC009NE2LS OptiMOSTM Power-MOSFET Product Summary Features VDS 25 V Optimized for e-fuse and ORing application RDS(on),max 0.9 mW Very low on-resistance R @ V =4.5 V DS(on) GS ID 100 A 100% avalanche tested QOSS 38 nC Superior thermal resistance QG(0V..10V) 126 nC N-channel Qualified according to JEDEC1) for target applications PG-TDSON-8 P... See More ⇒

Detailed specifications: IXTH240N15X4, IXTP34N65X2, IXTT240N15X4HV, AIMW120R045M1, AUIRLS8409-7P, BF2040, BF2040R, BF2040W, SI2302, BSC010N04LS6, BSC010N04LST, BSC011N03LST, BSC014N06NSSC, BSC015NE2LS5I, BSC016N06NST, BSC021N08NS5, BSC022N04LS6