All MOSFET. BSC007N04LS6 Datasheet

 

BSC007N04LS6 Datasheet and Replacement


   Type Designator: BSC007N04LS6
   Marking Code: 07N04LS6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id| ⓘ - Maximum Drain Current: 48 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 94 nC
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 2100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0007 Ohm
   Package: SUPERSO8
 

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BSC007N04LS6 Datasheet (PDF)

 ..1. Size:1552K  infineon
 bsc007n04ls6.pdf pdf_icon

BSC007N04LS6

BSC007N04LS6MOSFETTDSON-8 FL (enlarged source interconnection)OptiMOSTM 6 Power-Transistor, 40 V876Features5 Optimized for synchronous application Very low on-resistance RDS(on)1 52 6 100% avalanche tested734 8 Superior thermal resistance N-channel4 Pb-free lead plating; RoHS compliant3 Halogen-free according to IEC61249-2-21 2

 9.1. Size:1528K  infineon
 bsc009ne2ls5i.pdf pdf_icon

BSC007N04LS6

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 25 VBSC009NE2LS5IData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 25 VBSC009NE2LS5ISuperSO81 Description5867Features7685 Optimized for high performance buck converters Monolithic integrated Schottky like diode Very low on

 9.2. Size:1502K  infineon
 bsc009ne2ls5.pdf pdf_icon

BSC007N04LS6

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 25 VBSC009NE2LS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 25 VBSC009NE2LS5SuperSO81 Description5867Features7685 Optimized for high performance buck converters Very low on-resistance R @ V =4.5 VDS(on) GS 100% ava

 9.3. Size:693K  infineon
 bsc009ne2ls.pdf pdf_icon

BSC007N04LS6

BSC009NE2LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized for e-fuse and ORing applicationRDS(on),max 0.9 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 100 A 100% avalanche testedQOSS 38 nC Superior thermal resistanceQG(0V..10V) 126 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TDSON-8 P

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History: IRF7240TRPBF

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