BSC059N04LS6 Todos los transistores

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BSC059N04LS6 MOSFET TDSON-8 FL (enlarged source interconnection) OptiMOSTM 6 Power-Transistor, 40 V 8 7 6 Features 5 Optimized for synchronous application Very low on-resistance R DS(on) 1 5 2 6 100% avalanche tested 7 3 4 8 Superior thermal resistance N-channel 4 Pb-free lead plating; RoHS compliant 3 Halogen-free according to IEC61249-2-21 2

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BSC059N04LS G OptiMOS 3 Power-Transistor Product Summary Features VDS 40 V Fast switching MOSFET for SMPS RDS(on),max 5.9 mW Optimized technology for DC/DC converters ID 73 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) S

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BSC059N03S OptiMOS 2 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 5.5 m DS(on),max Optimized technology for notebook DC/DC converters I 50 A D Qualified according to JEDEC1 for target applications N-channel Logic level P-TDSON-8 Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on)