BSC059N04LS6 Datasheet and Replacement
Type Designator: BSC059N04LS6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 17 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 1.2 nS
Cossⓘ - Output Capacitance: 210 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm
Package: SUPERSO8
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BSC059N04LS6 Datasheet (PDF)
bsc059n04ls6.pdf

BSC059N04LS6MOSFETTDSON-8 FL (enlarged source interconnection)OptiMOSTM 6 Power-Transistor, 40 V876Features5 Optimized for synchronous application Very low on-resistance RDS(on)1 52 6 100% avalanche tested734 8 Superior thermal resistance N-channel4 Pb-free lead plating; RoHS compliant3 Halogen-free according to IEC61249-2-21 2
bsc059n04lsg.pdf

BSC059N04LS GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 40 V Fast switching MOSFET for SMPSRDS(on),max 5.9 mW Optimized technology for DC/DC convertersID 73 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) S
bsc059n03s.pdf

BSC059N03SOptiMOS2 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 5.5m DS(on),max Optimized technology for notebook DC/DC convertersI 50 AD Qualified according to JEDEC1 for target applications N-channel Logic levelP-TDSON-8 Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SIHFI9520G | AONS66620 | HX3415A | NCEP18N10AG | SVS70R420SE3TR | FQB9P25TM | IRHG6110
Keywords - BSC059N04LS6 MOSFET datasheet
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History: SIHFI9520G | AONS66620 | HX3415A | NCEP18N10AG | SVS70R420SE3TR | FQB9P25TM | IRHG6110



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