BSC110N15NS5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSC110N15NS5
Código: 110N15NS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.6 VQgⓘ - Carga de la puerta: 28 nC
trⓘ - Tiempo de subida: 3.3 nS
Cossⓘ - Capacitancia de salida: 515 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
Paquete / Cubierta: SUPERSO8
Búsqueda de reemplazo de MOSFET BSC110N15NS5
BSC110N15NS5 Datasheet (PDF)
bsc110n15ns5.pdf
BSC110N15NS5MOSFETSuperSO8OptiMOSTM 5 Power-Transistor, 150 V5867Features 7685 N-channel, normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 150 C operating temperature4 Pb-free lead plating; RoHS compliant132 2 Qualified according to JEDEC1) for target application3 14 Ideal for hig
bsc110n15ns5.pdf
BSC110N15NS5MOSFETSuperSO8OptiMOSTM 5 Power-Transistor, 150 V5867Features 7685 N-channel, normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 150 C operating temperature4 Pb-free lead plating; RoHS compliant132 2 Qualified according to JEDEC1) for target application3 14 Ideal for hig
bsc110n06ns3g.pdf
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bsc110n06ns3.pdf
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bsc112n06ld.pdf
BSC112N06LDMOSFETPG-TDSON-8-4OptiMOSTM-T2 Power Transistor, 60 V8 17Features 26354 Dual N-channel, Logic level Fast switching MOSFETs for SMPS Optimized technology for Synchronous Rectification Pb-free plating; RoHS compliant182 7 100% Avalanche tested3 654 Superior Thermal Resistance Halogen-free according to IEC61249-2-21Product Va
bsc118n10ns8 bsc118n10nsg.pdf
BSC118N10NS GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 11.8mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 71 AD Very low on-resistance RDS(on) 150 C operating temperaturePG-TDSON-8 Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ide
bsc117n08ns5.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-Transistor, 80 VBSC117N08NS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-Transistor, 80 VBSC117N08NS5SuperSO81 Description5867Features7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal re
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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