BSC110N15NS5 Todos los transistores

 ..1. Size:976K  1
 bsc110n15ns5.pdf

BSC110N15NS5 MOSFET SuperSO8 OptiMOSTM 5 Power-Transistor, 150 V 5 8 6 7 Features 7 6 8 5 N-channel, normal level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 150 C operating temperature 4 Pb-free lead plating; RoHS compliant 1 3 2 2 Qualified according to JEDEC1) for target application 3 1 4 Ideal for hig

 ..2. Size:976K  infineon
 bsc110n15ns5.pdf

BSC110N15NS5 MOSFET SuperSO8 OptiMOSTM 5 Power-Transistor, 150 V 5 8 6 7 Features 7 6 8 5 N-channel, normal level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 150 C operating temperature 4 Pb-free lead plating; RoHS compliant 1 3 2 2 Qualified according to JEDEC1) for target application 3 1 4 Ideal for hig

 7.1. Size:393K  infineon
 bsc110n06ns3g.pdf

Type BSC110N06NS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 60 V Ideal for high frequency switching and sync. rec. RDS(on),max 11 mW Optimized technology for DC/DC converters ID 50 A Excellent gate charge x R product (FOM) DS(on) Superior thermal resistance N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compl

 7.2. Size:591K  infineon
 bsc110n06ns3.pdf

pe $ $ TM "9@/; %;+877+;B Features V D Q #4513I CG9D389>7 1>4 CI>3 B53 R 11 m D n) m x Q ( @D9=9J54 D538>?F5BD5BC I D Q H35>5?B=1

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 bsc119n03s g.pdf

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 bsc112n06ld.pdf

BSC112N06LD MOSFET PG-TDSON-8-4 OptiMOSTM-T2 Power Transistor, 60 V 8 1 7 Features 2 6 3 5 4 Dual N-channel, Logic level Fast switching MOSFETs for SMPS Optimized technology for Synchronous Rectification Pb-free plating; RoHS compliant 1 8 2 7 100% Avalanche tested 3 6 5 4 Superior Thermal Resistance Halogen-free according to IEC61249-2-21 Product Va

 9.3. Size:439K  infineon
 bsc118n10ns8 bsc118n10nsg.pdf

BSC118N10NS G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 11.8 m DS(on),max Excellent gate charge x R product (FOM) DS(on) I 71 A D Very low on-resistance R DS(on) 150 C operating temperature PG-TDSON-8 Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ide

 9.4. Size:1175K  infineon
 bsc117n08ns5.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-Transistor, 80 V BSC117N08NS5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-Transistor, 80 V BSC117N08NS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal re