Справочник MOSFET. BSC110N15NS5

 

BSC110N15NS5 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BSC110N15NS5
   Маркировка: 110N15NS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.6 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 28 nC
   trⓘ - Время нарастания: 3.3 ns
   Cossⓘ - Выходная емкость: 515 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
   Тип корпуса: SUPERSO8

 Аналог (замена) для BSC110N15NS5

 

 

BSC110N15NS5 Datasheet (PDF)

 ..1. Size:976K  1
 bsc110n15ns5.pdf

BSC110N15NS5 BSC110N15NS5

BSC110N15NS5MOSFETSuperSO8OptiMOSTM 5 Power-Transistor, 150 V5867Features 7685 N-channel, normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 150 C operating temperature4 Pb-free lead plating; RoHS compliant132 2 Qualified according to JEDEC1) for target application3 14 Ideal for hig

 ..2. Size:976K  infineon
 bsc110n15ns5.pdf

BSC110N15NS5 BSC110N15NS5

BSC110N15NS5MOSFETSuperSO8OptiMOSTM 5 Power-Transistor, 150 V5867Features 7685 N-channel, normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 150 C operating temperature4 Pb-free lead plating; RoHS compliant132 2 Qualified according to JEDEC1) for target application3 14 Ideal for hig

 7.1. Size:393K  infineon
 bsc110n06ns3g.pdf

BSC110N15NS5 BSC110N15NS5

TypeBSC110N06NS3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 60 V Ideal for high frequency switching and sync. rec.RDS(on),max 11 mW Optimized technology for DC/DC convertersID 50 A Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compl

 7.2. Size:591K  infineon
 bsc110n06ns3.pdf

BSC110N15NS5 BSC110N15NS5

pe $ $ TM "9@/; %;+877+;BFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R 11m D n) m xQ ( @D9=9J54 D538>?F5BD5BCI DQ H35>5?B=1

 9.1. Size:635K  infineon
 bsc119n03s g.pdf

BSC110N15NS5 BSC110N15NS5

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 9.2. Size:1180K  infineon
 bsc112n06ld.pdf

BSC110N15NS5 BSC110N15NS5

BSC112N06LDMOSFETPG-TDSON-8-4OptiMOSTM-T2 Power Transistor, 60 V8 17Features 26354 Dual N-channel, Logic level Fast switching MOSFETs for SMPS Optimized technology for Synchronous Rectification Pb-free plating; RoHS compliant182 7 100% Avalanche tested3 654 Superior Thermal Resistance Halogen-free according to IEC61249-2-21Product Va

 9.3. Size:439K  infineon
 bsc118n10ns8 bsc118n10nsg.pdf

BSC110N15NS5 BSC110N15NS5

BSC118N10NS GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 11.8mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 71 AD Very low on-resistance RDS(on) 150 C operating temperaturePG-TDSON-8 Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ide

 9.4. Size:1175K  infineon
 bsc117n08ns5.pdf

BSC110N15NS5 BSC110N15NS5

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-Transistor, 80 VBSC117N08NS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-Transistor, 80 VBSC117N08NS5SuperSO81 Description5867Features7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal re

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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