BSC110N15NS5 Datasheet and Replacement
Type Designator: BSC110N15NS5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3.3 nS
Cossⓘ - Output Capacitance: 515 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: SUPERSO8
BSC110N15NS5 substitution
BSC110N15NS5 Datasheet (PDF)
bsc110n15ns5.pdf

BSC110N15NS5MOSFETSuperSO8OptiMOSTM 5 Power-Transistor, 150 V5867Features 7685 N-channel, normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 150 C operating temperature4 Pb-free lead plating; RoHS compliant132 2 Qualified according to JEDEC1) for target application3 14 Ideal for hig
bsc110n15ns5.pdf

BSC110N15NS5MOSFETSuperSO8OptiMOSTM 5 Power-Transistor, 150 V5867Features 7685 N-channel, normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 150 C operating temperature4 Pb-free lead plating; RoHS compliant132 2 Qualified according to JEDEC1) for target application3 14 Ideal for hig
bsc110n06ns3g.pdf

TypeBSC110N06NS3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 60 V Ideal for high frequency switching and sync. rec.RDS(on),max 11 mW Optimized technology for DC/DC convertersID 50 A Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compl
bsc110n06ns3.pdf

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Datasheet: BSC0804LS , BSC0805LS , BSC093N15NS5 , BSC094N06LS5 , BSC096N10LS5 , BSC097N06NST , BSC0993ND , BSC0996NS , IRFZ44N , BSC112N06LD , BSC13DN30NSFD , BSC146N10LS5 , BSC155N06ND , BSC160N15NS5 , BSC350N20NSFD , BSF450NE7NH3G , BSS340NW .
Keywords - BSC110N15NS5 MOSFET datasheet
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