BSZ021N04LS6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BSZ021N04LS6
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 1.6 nS
   Cossⓘ - Capacitancia de salida: 690 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0021 Ohm
   Paquete / Cubierta: TSDSON-8

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BSZ021N04LS6 Datasheet (PDF)

..1. Size:1521K infineon
bsz021n04ls6.pdf

BSZ021N04LS6MOSFETTSDSON-8 FLOptiMOSTM6 Power-Transistor, 40 V(enlarged source interconnection)Features Optimized for synchronous application Very low on-resistance RDS(on) 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free accordi

9.1. Size:1519K infineon
bsz024n04ls6.pdf

BSZ024N04LS6MOSFETTSDSON-8 FLOptiMOSTM 6 Power-Transistor, 40 V(enlarged source interconnection)Features Optimized for synchronous application Very low on-resistance RDS(on) 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free accord

9.2. Size:709K infineon
bsz028n04ls.pdf

BSZ028N04LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for high performance SMPS, e.g. sync. rec.RDS(on),max 2.8 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 40 A 100% avalanche testedQOSS 28 nC Superior thermal resistanceQG(0V..10V) 32 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TSDSON-

9.3. Size:1401K infineon
bsz025n04ls.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM Power-MOSFET, 40 VBSZ025N04LSData SheetRev. 2.1FinalPower Management & MultimarketOptiMOSTM Power-MOSFET, 40 VBSZ025N04LSTSDSON-8 FL1 Description(enlarged source interconnection)Features Optimized for synchronous rectification Very low on-resistance RDS(on) 100% avalanche test

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: FCP20N60FS

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