BSZ021N04LS6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BSZ021N04LS6 Datasheet (PDF)

..1. Size:1521K infineon
bsz021n04ls6.pdf pdf_icon

BSZ021N04LS6MOSFETTSDSON-8 FLOptiMOSTM6 Power-Transistor, 40 V(enlarged source interconnection)Features Optimized for synchronous application Very low on-resistance RDS(on) 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free accordi

9.1. Size:1519K infineon
bsz024n04ls6.pdf pdf_icon

BSZ024N04LS6MOSFETTSDSON-8 FLOptiMOSTM 6 Power-Transistor, 40 V(enlarged source interconnection)Features Optimized for synchronous application Very low on-resistance RDS(on) 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free accord

9.2. Size:709K infineon
bsz028n04ls.pdf pdf_icon

BSZ028N04LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for high performance SMPS, e.g. sync. rec.RDS(on),max 2.8 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 40 A 100% avalanche testedQOSS 28 nC Superior thermal resistanceQG(0V..10V) 32 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TSDSON-

9.3. Size:1401K infineon
bsz025n04ls.pdf pdf_icon

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM Power-MOSFET, 40 VBSZ025N04LSData SheetRev. 2.1FinalPower Management & MultimarketOptiMOSTM Power-MOSFET, 40 VBSZ025N04LSTSDSON-8 FL1 Description(enlarged source interconnection)Features Optimized for synchronous rectification Very low on-resistance RDS(on) 100% avalanche test

Otros transistores... BSF450NE7NH3G , BSS340NW , BSZ009NE2LS5 , BSZ010NE2LS5 , BSZ011NE2LS5I , BSZ013NE2LS5I , BSZ017NE2LS5I , BSZ018N04LS6 , 10N60 , BSZ024N04LS6 , BSZ031NE2LS5 , BSZ033NE2LS5 , BSZ037N06LS5 , BSZ039N06NS , BSZ040N06LS5 , BSZ0500NSI , BSZ0589NS .