BSZ021N04LS6 Datasheet and Replacement. Cross Reference Search

BSZ021N04LS6 Datasheet (PDF)

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BSZ021N04LS6MOSFETTSDSON-8 FLOptiMOSTM6 Power-Transistor, 40 V(enlarged source interconnection)Features Optimized for synchronous application Very low on-resistance RDS(on) 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free accordi

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BSZ024N04LS6MOSFETTSDSON-8 FLOptiMOSTM 6 Power-Transistor, 40 V(enlarged source interconnection)Features Optimized for synchronous application Very low on-resistance RDS(on) 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free accord

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BSZ028N04LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for high performance SMPS, e.g. sync. rec.RDS(on),max 2.8 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 40 A 100% avalanche testedQOSS 28 nC Superior thermal resistanceQG(0V..10V) 32 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TSDSON-

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MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM Power-MOSFET, 40 VBSZ025N04LSData SheetRev. 2.1FinalPower Management & MultimarketOptiMOSTM Power-MOSFET, 40 VBSZ025N04LSTSDSON-8 FL1 Description(enlarged source interconnection)Features Optimized for synchronous rectification Very low on-resistance RDS(on) 100% avalanche test

Datasheet: BSF450NE7NH3G , BSS340NW , BSZ009NE2LS5 , BSZ010NE2LS5 , BSZ011NE2LS5I , BSZ013NE2LS5I , BSZ017NE2LS5I , BSZ018N04LS6 , 10N60 , BSZ024N04LS6 , BSZ031NE2LS5 , BSZ033NE2LS5 , BSZ037N06LS5 , BSZ039N06NS , BSZ040N06LS5 , BSZ0500NSI , BSZ0589NS .