BSZ024N04LS6 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BSZ024N04LS6 datasheet

..1. Size:1519K infineon
bsz024n04ls6.pdf pdf_icon

BSZ024N04LS6 MOSFET TSDSON-8 FL OptiMOSTM 6 Power-Transistor, 40 V (enlarged source interconnection) Features Optimized for synchronous application Very low on-resistance R DS(on) 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free accord

9.1. Size:709K infineon
bsz028n04ls.pdf pdf_icon

BSZ028N04LS OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V Optimized for high performance SMPS, e.g. sync. rec. RDS(on),max 2.8 mW Very low on-resistance R @ V =4.5 V DS(on) GS ID 40 A 100% avalanche tested QOSS 28 nC Superior thermal resistance QG(0V..10V) 32 nC N-channel Qualified according to JEDEC1) for target applications PG-TSDSON-

9.2. Size:1401K infineon
bsz025n04ls.pdf pdf_icon

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-MOSFET, 40 V BSZ025N04LS Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOSTM Power-MOSFET, 40 V BSZ025N04LS TSDSON-8 FL 1 Description (enlarged source interconnection) Features Optimized for synchronous rectification Very low on-resistance R DS(on) 100% avalanche test

9.3. Size:1521K infineon
bsz021n04ls6.pdf pdf_icon

BSZ021N04LS6 MOSFET TSDSON-8 FL OptiMOSTM6 Power-Transistor, 40 V (enlarged source interconnection) Features Optimized for synchronous application Very low on-resistance R DS(on) 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free accordi

Otros transistores... BSS340NW , BSZ009NE2LS5 , BSZ010NE2LS5 , BSZ011NE2LS5I , BSZ013NE2LS5I , BSZ017NE2LS5I , BSZ018N04LS6 , BSZ021N04LS6 , AO3400 , BSZ031NE2LS5 , BSZ033NE2LS5 , BSZ037N06LS5 , BSZ039N06NS , BSZ040N06LS5 , BSZ0500NSI , BSZ0589NS , BSZ063N04LS6 .