BSZ024N04LS6 PDF and Equivalents Search

 

BSZ024N04LS6 Specs and Replacement

Type Designator: BSZ024N04LS6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 570 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm

Package: TSDSON-8

BSZ024N04LS6 substitution

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BSZ024N04LS6 datasheet

 ..1. Size:1519K  infineon
 bsz024n04ls6.pdf pdf_icon

BSZ024N04LS6

BSZ024N04LS6 MOSFET TSDSON-8 FL OptiMOSTM 6 Power-Transistor, 40 V (enlarged source interconnection) Features Optimized for synchronous application Very low on-resistance R DS(on) 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free accord... See More ⇒

 9.1. Size:709K  infineon
 bsz028n04ls.pdf pdf_icon

BSZ024N04LS6

BSZ028N04LS OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V Optimized for high performance SMPS, e.g. sync. rec. RDS(on),max 2.8 mW Very low on-resistance R @ V =4.5 V DS(on) GS ID 40 A 100% avalanche tested QOSS 28 nC Superior thermal resistance QG(0V..10V) 32 nC N-channel Qualified according to JEDEC1) for target applications PG-TSDSON-... See More ⇒

 9.2. Size:1401K  infineon
 bsz025n04ls.pdf pdf_icon

BSZ024N04LS6

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-MOSFET, 40 V BSZ025N04LS Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOSTM Power-MOSFET, 40 V BSZ025N04LS TSDSON-8 FL 1 Description (enlarged source interconnection) Features Optimized for synchronous rectification Very low on-resistance R DS(on) 100% avalanche test... See More ⇒

 9.3. Size:1521K  infineon
 bsz021n04ls6.pdf pdf_icon

BSZ024N04LS6

BSZ021N04LS6 MOSFET TSDSON-8 FL OptiMOSTM6 Power-Transistor, 40 V (enlarged source interconnection) Features Optimized for synchronous application Very low on-resistance R DS(on) 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free accordi... See More ⇒

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Detailed specifications: BSS340NW, BSZ009NE2LS5, BSZ010NE2LS5, BSZ011NE2LS5I, BSZ013NE2LS5I, BSZ017NE2LS5I, BSZ018N04LS6, BSZ021N04LS6, AO3400, BSZ031NE2LS5, BSZ033NE2LS5, BSZ037N06LS5, BSZ039N06NS, BSZ040N06LS5, BSZ0500NSI, BSZ0589NS, BSZ063N04LS6

Keywords - BSZ024N04LS6 MOSFET specs

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