IMW65R027M1H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IMW65R027M1H
Código: 65R027M1
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 189 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 23 V
Corriente continua de drenaje |Id|: 47 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5.7 V
Carga de la puerta (Qg): 62 nC
Tiempo de subida (tr): 13.6 nS
Conductancia de drenaje-sustrato (Cd): 244 pF
Resistencia entre drenaje y fuente RDS(on): 0.034 Ohm
Paquete / Cubierta: TO247
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IMW65R027M1H Datasheet (PDF)
imw65r027m1h.pdf
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