IMW65R027M1H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IMW65R027M1H
Código: 65R027M1
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 189 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 23 V
|Id|ⓘ - Corriente continua de drenaje: 47 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5.7 VQgⓘ - Carga de la puerta: 62 nC
trⓘ - Tiempo de subida: 13.6 nS
Cossⓘ - Capacitancia de salida: 244 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.034 Ohm
Paquete / Cubierta: TO247
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IMW65R027M1H Datasheet (PDF)
imw65r027m1h.pdf
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imw65r072m1h.pdf
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imw65r107m1h.pdf
IMW65R107M1HMOSFETPG-TO 247-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature and
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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