IMW65R027M1H Todos los transistores

 

IMW65R027M1H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IMW65R027M1H

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 189 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 23 V

|Id|ⓘ - Corriente continua de drenaje: 47 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13.6 nS

Cossⓘ - Capacitancia de salida: 244 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.034 Ohm

Encapsulados: TO247

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IMW65R027M1H datasheet

 ..1. Size:1459K  infineon
 imw65r027m1h.pdf pdf_icon

IMW65R027M1H

IMW65R027M1H MOSFET PG-TO 247-3 650 V CoolSiC M1 SiC Trench Power Device The 650 V CoolSiC is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap Tab SiC material characteristics, the 650V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and

 7.1. Size:1469K  infineon
 imw65r048m1h.pdf pdf_icon

IMW65R027M1H

IMW65R048M1H MOSFET PG-TO 247-3 650 V CoolSiC M1 SiC Trench Power Device The 650 V CoolSiC is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap Tab SiC material characteristics, the 650V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and

 7.2. Size:1453K  infineon
 imw65r072m1h.pdf pdf_icon

IMW65R027M1H

IMW65R072M1H MOSFET PG-TO 247-3 650 V CoolSiC M1 SiC Trench Power Device The 650 V CoolSiC is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap Tab SiC material characteristics, the 650V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and

 8.1. Size:1457K  infineon
 imw65r107m1h.pdf pdf_icon

IMW65R027M1H

IMW65R107M1H MOSFET PG-TO 247-3 650 V CoolSiC M1 SiC Trench Power Device The 650 V CoolSiC is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap Tab SiC material characteristics, the 650V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and

MOSTRAR MÁS

Otros transistores... IAUS180N04S4N015 , IMW120R030M1H , IMW120R045M1 , IMW120R060M1H , IMW120R090M1H , IMW120R140M1H , IMW120R220M1H , IMW120R350M1H , 12N60 , IMW65R048M1H , IMW65R072M1H , IMW65R107M1H , IMZ120R030M1H , IMZ120R060M1H , IMZ120R090M1H , IMZ120R140M1H , IMZ120R220M1H .

 

 

 

 

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