IMW65R027M1H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IMW65R027M1H
Маркировка: 65R027M1
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 189 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 23 V
Пороговое напряжение включения |Ugs(th)|: 5.7 V
Максимально допустимый постоянный ток стока |Id|: 47 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 62 nC
Время нарастания (tr): 13.6 ns
Выходная емкость (Cd): 244 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.034 Ohm
Тип корпуса: TO247
Аналог (замена) для IMW65R027M1H
IMW65R027M1H Datasheet (PDF)
imw65r027m1h.pdf
IMW65R027M1HMOSFETPG-TO 247-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature and
imw65r048m1h.pdf
IMW65R048M1HMOSFETPG-TO 247-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature and
imw65r072m1h.pdf
IMW65R072M1HMOSFETPG-TO 247-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature and
imw65r107m1h.pdf
IMW65R107M1HMOSFETPG-TO 247-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature and
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: OSG55R074HZF | OSG60R099HT3F
