Справочник MOSFET. IMW65R027M1H

 

IMW65R027M1H Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IMW65R027M1H
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 189 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 23 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 47 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 13.6 ns
   Cossⓘ - Выходная емкость: 244 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.034 Ohm
   Тип корпуса: TO247
 

 Аналог (замена) для IMW65R027M1H

   - подбор ⓘ MOSFET транзистора по параметрам

 

IMW65R027M1H Datasheet (PDF)

 ..1. Size:1459K  infineon
 imw65r027m1h.pdf pdf_icon

IMW65R027M1H

IMW65R027M1HMOSFETPG-TO 247-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature and

 7.1. Size:1469K  infineon
 imw65r048m1h.pdf pdf_icon

IMW65R027M1H

IMW65R048M1HMOSFETPG-TO 247-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature and

 7.2. Size:1453K  infineon
 imw65r072m1h.pdf pdf_icon

IMW65R027M1H

IMW65R072M1HMOSFETPG-TO 247-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature and

 8.1. Size:1457K  infineon
 imw65r107m1h.pdf pdf_icon

IMW65R027M1H

IMW65R107M1HMOSFETPG-TO 247-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature and

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... IAUS180N04S4N015 , IMW120R030M1H , IMW120R045M1 , IMW120R060M1H , IMW120R090M1H , IMW120R140M1H , IMW120R220M1H , IMW120R350M1H , 4N60 , IMW65R048M1H , IMW65R072M1H , IMW65R107M1H , IMZ120R030M1H , IMZ120R060M1H , IMZ120R090M1H , IMZ120R140M1H , IMZ120R220M1H .

History: IMW120R220M1H

 

 
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