IMW65R027M1H MOSFET. Datasheet pdf. Equivalent
Type Designator: IMW65R027M1H
Marking Code: 65R027M1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 189 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 23 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.7 V
|Id|ⓘ - Maximum Drain Current: 47 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 62 nC
trⓘ - Rise Time: 13.6 nS
Cossⓘ - Output Capacitance: 244 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
Package: TO247
IMW65R027M1H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IMW65R027M1H Datasheet (PDF)
imw65r027m1h.pdf
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imw65r048m1h.pdf
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imw65r072m1h.pdf
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imw65r107m1h.pdf
IMW65R107M1HMOSFETPG-TO 247-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature and
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IXTQ36P15P
History: IXTQ36P15P
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