IMW65R027M1H MOSFET Datasheet: N-Ch, 650V, 47A. Full specification with pinout and replacement list

IMW65R027M1H Specs and Replacement

Type Designator: IMW65R027M1H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 189 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 23 V

|Id| ⓘ - Maximum Drain Current: 47 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13.6 nS

Cossⓘ - Output Capacitance: 244 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm

Package: TO247

IMW65R027M1H substitution

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IMW65R027M1H datasheet

..1. Size:1459K infineon
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IMW65R027M1H MOSFET PG-TO 247-3 650 V CoolSiC M1 SiC Trench Power Device The 650 V CoolSiC is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap Tab SiC material characteristics, the 650V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and ... See More ⇒

7.1. Size:1469K infineon
imw65r048m1h.pdf pdf_icon

IMW65R048M1H MOSFET PG-TO 247-3 650 V CoolSiC M1 SiC Trench Power Device The 650 V CoolSiC is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap Tab SiC material characteristics, the 650V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and ... See More ⇒

7.2. Size:1453K infineon
imw65r072m1h.pdf pdf_icon

IMW65R072M1H MOSFET PG-TO 247-3 650 V CoolSiC M1 SiC Trench Power Device The 650 V CoolSiC is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap Tab SiC material characteristics, the 650V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and ... See More ⇒

8.1. Size:1457K infineon
imw65r107m1h.pdf pdf_icon

IMW65R107M1H MOSFET PG-TO 247-3 650 V CoolSiC M1 SiC Trench Power Device The 650 V CoolSiC is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap Tab SiC material characteristics, the 650V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and ... See More ⇒

Detailed specifications: IAUS180N04S4N015, IMW120R030M1H, IMW120R045M1, IMW120R060M1H, IMW120R090M1H, IMW120R140M1H, IMW120R220M1H, IMW120R350M1H, 12N60, IMW65R048M1H, IMW65R072M1H, IMW65R107M1H, IMZ120R030M1H, IMZ120R060M1H, IMZ120R090M1H, IMZ120R140M1H, IMZ120R220M1H