IMZ120R030M1H Todos los transistores

 

IMZ120R030M1H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IMZ120R030M1H

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 227 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 23 V

|Id|ⓘ - Corriente continua de drenaje: 56 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11.6 nS

Cossⓘ - Capacitancia de salida: 116 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.042 Ohm

Encapsulados: TO247-4

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IMZ120R030M1H datasheet

 ..1. Size:1225K  infineon
 imz120r030m1h.pdf pdf_icon

IMZ120R030M1H

IMZ120R030M1H IMZ120R030M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drain pin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th) Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust

 6.1. Size:1224K  infineon
 imz120r090m1h.pdf pdf_icon

IMZ120R030M1H

IMZ120R090M1H IMZ120R090M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drain pin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th) Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust

 6.2. Size:1223K  infineon
 imz120r060m1h.pdf pdf_icon

IMZ120R030M1H

IMZ120R060M1H IMZ120R060M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drain pin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th) Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust

 7.1. Size:1223K  infineon
 imz120r140m1h.pdf pdf_icon

IMZ120R030M1H

IMZ120R140M1H IMZ120R140M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drain pin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th) Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust

MOSTRAR MÁS

Otros transistores... IMW120R090M1H , IMW120R140M1H , IMW120R220M1H , IMW120R350M1H , IMW65R027M1H , IMW65R048M1H , IMW65R072M1H , IMW65R107M1H , AON6380 , IMZ120R060M1H , IMZ120R090M1H , IMZ120R140M1H , IMZ120R220M1H , IMZ120R350M1H , IMZA65R027M1H , IMZA65R048M1H , IMZA65R072M1H .

History: HM1N60PR | CRST085N15N | JMPF7N65BJ

 

 

 

 

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