IMZ120R030M1H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IMZ120R030M1H
Маркировка: 12M1H030
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 227 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 23 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5.7 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 56 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 63 nC
trⓘ - Время нарастания: 11.6 ns
Cossⓘ - Выходная емкость: 116 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.042 Ohm
Тип корпуса: TO247-4
Аналог (замена) для IMZ120R030M1H
IMZ120R030M1H Datasheet (PDF)
imz120r030m1h.pdf
IMZ120R030M1H IMZ120R030M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drainpin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th)Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust
imz120r090m1h.pdf
IMZ120R090M1H IMZ120R090M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drainpin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th)Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust
imz120r060m1h.pdf
IMZ120R060M1H IMZ120R060M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drainpin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th)Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust
imz120r140m1h.pdf
IMZ120R140M1H IMZ120R140M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drainpin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th)Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust
imz120r350m1h.pdf
IMZ120R350M1H IMZ120R350M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drainpin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th)Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust
imz120r220m1h.pdf
IMZ120R220M1H IMZ120R220M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drainpin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th)Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
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