IMZ120R030M1H PDF and Equivalents Search

 

IMZ120R030M1H Specs and Replacement

Type Designator: IMZ120R030M1H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 227 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 23 V

|Id| ⓘ - Maximum Drain Current: 56 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.6 nS

Cossⓘ - Output Capacitance: 116 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm

Package: TO247-4

IMZ120R030M1H substitution

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IMZ120R030M1H datasheet

 ..1. Size:1225K  infineon
 imz120r030m1h.pdf pdf_icon

IMZ120R030M1H

IMZ120R030M1H IMZ120R030M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drain pin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th) Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust ... See More ⇒

 6.1. Size:1224K  infineon
 imz120r090m1h.pdf pdf_icon

IMZ120R030M1H

IMZ120R090M1H IMZ120R090M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drain pin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th) Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust ... See More ⇒

 6.2. Size:1223K  infineon
 imz120r060m1h.pdf pdf_icon

IMZ120R030M1H

IMZ120R060M1H IMZ120R060M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drain pin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th) Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust ... See More ⇒

 7.1. Size:1223K  infineon
 imz120r140m1h.pdf pdf_icon

IMZ120R030M1H

IMZ120R140M1H IMZ120R140M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drain pin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th) Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust ... See More ⇒

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Detailed specifications: IMW120R090M1H, IMW120R140M1H, IMW120R220M1H, IMW120R350M1H, IMW65R027M1H, IMW65R048M1H, IMW65R072M1H, IMW65R107M1H, AON6380, IMZ120R060M1H, IMZ120R090M1H, IMZ120R140M1H, IMZ120R220M1H, IMZ120R350M1H, IMZA65R027M1H, IMZA65R048M1H, IMZA65R072M1H

Keywords - IMZ120R030M1H MOSFET specs

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