AUIRF1324L Todos los transistores

 

AUIRF1324L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRF1324L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 24 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 195 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 190 nS

Cossⓘ - Capacitancia de salida: 3440 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00165 Ohm

Encapsulados: TO262

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AUIRF1324L datasheet

 ..1. Size:461K  infineon
 auirf1324s auirf1324l.pdf pdf_icon

AUIRF1324L

AUIRF1324S AUTOMOTIVE GRADE AUIRF1324L HEXFET Power MOSFET Features VDSS 24V Advanced Process Technology RDS(on) typ. 1.3m Ultra Low On-Resistance max. 1.65m Dynamic dV/dT Rating 175 C Operating Temperature ID (Silicon Limited) 340A Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up to Tjmax Lead-

 5.1. Size:472K  international rectifier
 auirf1324strl.pdf pdf_icon

AUIRF1324L

PD - 97483 AUIRF1324S AUTOMOTIVE GRADE AUIRF1324L HEXFET Power MOSFET Features Advanced Process Technology D VDSS 24V Ultra Low On-Resistance Dynamic dV/dT Rating RDS(on) typ. 1.3m 175 C Operating Temperature G ID (Silicon Limited) Fast Switching 340A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 195A Lead-Free, RoHS Compliant S Automotive Qua

 5.2. Size:240K  international rectifier
 auirf1324wl.pdf pdf_icon

AUIRF1324L

PD - 97676A AUTOMOTIVE GRADE AUIRF1324WL HEXFET Power MOSFET Features l Advanced Process Technology D V(BR)DSS 24V l Ultra Low On-Resistance RDS(on) typ. 1.16m l 50% Lower Lead Resistance max. 1.30m l 175 C Operating Temperature G l Fast Switching ID (Silicon Limited) 382A l Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 240A l Lead-Free,

 5.3. Size:432K  international rectifier
 auirf1324.pdf pdf_icon

AUIRF1324L

PD - 97482 AUTOMOTIVE GRADE AUIRF1324 HEXFET Power MOSFET Features D VDSS 24V Advanced Process Technology Ultra Low On-Resistance RDS(on) typ. 1.2m 175 C Operating Temperature max. 1.5m Fast Switching G Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 353A Lead-Free, RoHS Compliant S ID (Package Limited) 195A Automotive Qualified * Description Spe

MOSTRAR MÁS

Otros transistores... IPB120N04S4-04 , IPB120N04S4L-02 , IPB120N08S4-03 , IPB120N08S4-04 , IPB120P04P4-04 , IPB140N08S4-04 , IPB160N04S4L-H1 , IPB17N25S3-100 , IRLB4132 , AUIRF7734M2TR , AUIRF7749L2TR , AUIRF7759L2TR , AUIRF7769L2TR , AUIRF7799L2TR , AUIRF8736M2TR , AUIRF8739L2TR , AUIRFSA8409-7P .

History: HB3710P | 4N60L-TN3-R | SWD80N04V | RUF020N02 | AOWF10N60 | SWD4N50K | HM4354

 

 

 

 

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