All MOSFET. AUIRF1324L Datasheet

 

AUIRF1324L Datasheet and Replacement


   Type Designator: AUIRF1324L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 195 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 190 nS
   Cossⓘ - Output Capacitance: 3440 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00165 Ohm
   Package: TO262
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AUIRF1324L Datasheet (PDF)

 ..1. Size:461K  infineon
 auirf1324s auirf1324l.pdf pdf_icon

AUIRF1324L

AUIRF1324S AUTOMOTIVE GRADE AUIRF1324L HEXFET Power MOSFET Features VDSS 24V Advanced Process Technology RDS(on) typ. 1.3m Ultra Low On-Resistance max. 1.65m Dynamic dV/dT Rating 175C Operating Temperature ID (Silicon Limited) 340A Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up to Tjmax Lead-

 5.1. Size:472K  international rectifier
 auirf1324strl.pdf pdf_icon

AUIRF1324L

PD - 97483AUIRF1324SAUTOMOTIVE GRADEAUIRF1324LHEXFET Power MOSFETFeatures Advanced Process Technology DVDSS24V Ultra Low On-Resistance Dynamic dV/dT RatingRDS(on) typ.1.3m 175C Operating TemperatureGID (Silicon Limited) Fast Switching 340A Repetitive Avalanche Allowed up to TjmaxID (Package Limited)195A Lead-Free, RoHS Compliant S Automotive Qua

 5.2. Size:240K  international rectifier
 auirf1324wl.pdf pdf_icon

AUIRF1324L

PD - 97676AAUTOMOTIVE GRADEAUIRF1324WLHEXFET Power MOSFETFeaturesl Advanced Process TechnologyDV(BR)DSS24Vl Ultra Low On-ResistanceRDS(on) typ.1.16ml 50% Lower Lead Resistance max. 1.30ml 175C Operating TemperatureGl Fast SwitchingID (Silicon Limited)382A l Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)240A l Lead-Free,

 5.3. Size:432K  international rectifier
 auirf1324.pdf pdf_icon

AUIRF1324L

PD - 97482AUTOMOTIVE GRADEAUIRF1324HEXFET Power MOSFETFeaturesDVDSS24V Advanced Process Technology Ultra Low On-Resistance RDS(on) typ.1.2m 175C Operating Temperature max. 1.5m Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited) 353A Lead-Free, RoHS CompliantSID (Package Limited)195A Automotive Qualified *DescriptionSpe

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Keywords - AUIRF1324L MOSFET datasheet

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