BF999 Todos los transistores

Silicon N Channel MOSFET Triode BF 999 For high-frequency stages up to 300 MHz, preferably in FM applications Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BF 999 LB Q62702-F1132 G D S SOT-23 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 20 V Drain current ID 30 mA Gate-source peak current IGSM 10 Total power dissipation, TA

BF999 Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz 2 3 preferably in FM applications 1 Pb-free (RoHS compliant) package1) Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BF999 LBs 1=G 2=D 3=S - - - SOT23 Maximum Ratings Parameter Symbol Value Unit