BF999
MOSFET. Datasheet pdf. Equivalent
Type Designator: BF999
Marking Code: LB_LBs_LDs
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 0.03
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 0.9
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 71
Ohm
Package:
SOT23
BF999
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BF999
Datasheet (PDF)
..1. Size:116K siemens
bf999.pdf
Silicon N Channel MOSFET Triode BF 999 For high-frequency stages up to 300 MHz,preferably in FM applicationsType Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BF 999 LB Q62702-F1132 G D S SOT-23Maximum RatingsParameter Symbol Values UnitDrain-source voltage VDS 20 VDrain current ID 30 mAGate-source peak current IGSM 10Total power dissipation, TA
..2. Size:60K infineon
bf999.pdf
BF999Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz23 preferably in FM applications1 Pb-free (RoHS compliant) package1) Qualified according AEC Q101ESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configuration PackageBF999 LBs 1=G 2=D 3=S - - - SOT23Maximum RatingsParameter Symbol Value Unit
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