BF999 - Даташиты. Аналоги. Основные параметры

Silicon N Channel MOSFET Triode BF 999 For high-frequency stages up to 300 MHz,preferably in FM applicationsType Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BF 999 LB Q62702-F1132 G D S SOT-23Maximum RatingsParameter Symbol Values UnitDrain-source voltage VDS 20 VDrain current ID 30 mAGate-source peak current IGSM 10Total power dissipation, TA

BF999Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz23 preferably in FM applications1 Pb-free (RoHS compliant) package1) Qualified according AEC Q101ESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configuration PackageBF999 LBs 1=G 2=D 3=S - - - SOT23Maximum RatingsParameter Symbol Value Unit