BSC025N08LS5 Todos los transistores

 

BSC025N08LS5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSC025N08LS5
   Código: 025N08LS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 24 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   Qgⓘ - Carga de la puerta: 44 nC
   trⓘ - Tiempo de subida: 10.3 nS
   Cossⓘ - Capacitancia de salida: 840 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0025 Ohm
   Paquete / Cubierta: SUPERSO8

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BSC025N08LS5 Datasheet (PDF)

 ..1. Size:869K  infineon
bsc025n08ls5.pdf

BSC025N08LS5 BSC025N08LS5

BSC025N08LS5MOSFETSuperSO8OptiMOSTM5 Power-Transistor, 80 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. Rec. 100% avalanche tested Superior thermal resistance N-channel, logic level4 Qualified according to JEDEC1) for target applications132 2 Pb-free lead plating; RoHS compliant3 14 Halogen-free according

 6.1. Size:194K  infineon
bsc025n03ms.pdf

BSC025N08LS5 BSC025N08LS5

BSC025N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryV 30 VFeatures DSR V =10 V 2.5mDS(on),max GS Optimized for 5V driver application (Notebook, VGA, POL)V =4.5 V 3GS Low FOMSW for High Frequency SMPSI 100 AD 100% avalanche tested N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (

 6.2. Size:542K  infineon
bsc025n03msg.pdf

BSC025N08LS5 BSC025N08LS5

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 6.3. Size:382K  infineon
bsc025n03ls.pdf

BSC025N08LS5 BSC025N08LS5

BSC025N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDS Fast switching MOSFET for SMPS R 2.5mDS(on),max Optimized technology for DC/DC converters I 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Super

 6.4. Size:384K  infineon
bsc025n03lsg.pdf

BSC025N08LS5 BSC025N08LS5

BSC025N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDS Fast switching MOSFET for SMPS R 2.5mDS(on),max Optimized technology for DC/DC converters I 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Super

 6.5. Size:685K  infineon
bsc025n03ls .pdf

BSC025N08LS5 BSC025N08LS5

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