BSC025N08LS5 Todos los transistores

 ..1. Size:869K  infineon
 bsc025n08ls5.pdf

BSC025N08LS5 MOSFET SuperSO8 OptiMOSTM5 Power-Transistor, 80 V 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. Rec. 100% avalanche tested Superior thermal resistance N-channel, logic level 4 Qualified according to JEDEC1) for target applications 1 3 2 2 Pb-free lead plating; RoHS compliant 3 1 4 Halogen-free according

 6.1. Size:194K  infineon
 bsc025n03ms.pdf

BSC025N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary V 30 V Features DS R V =10 V 2.5 m DS(on),max GS Optimized for 5V driver application (Notebook, VGA, POL) V =4.5 V 3 GS Low FOMSW for High Frequency SMPS I 100 A D 100% avalanche tested N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (

 6.2. Size:542K  infineon
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 6.3. Size:382K  infineon
 bsc025n03ls.pdf

BSC025N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 2.5 m DS(on),max Optimized technology for DC/DC converters I 100 A D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Super

 6.4. Size:384K  infineon
 bsc025n03lsg.pdf

BSC025N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 2.5 m DS(on),max Optimized technology for DC/DC converters I 100 A D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Super

 6.5. Size:685K  infineon
 bsc025n03ls .pdf

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