BSC025N08LS5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSC025N08LS5
Código: 025N08LS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 24 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 VQgⓘ - Carga de la puerta: 44 nC
trⓘ - Tiempo de subida: 10.3 nS
Cossⓘ - Capacitancia de salida: 840 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0025 Ohm
Paquete / Cubierta: SUPERSO8
Búsqueda de reemplazo de MOSFET BSC025N08LS5
BSC025N08LS5 Datasheet (PDF)
bsc025n08ls5.pdf
BSC025N08LS5MOSFETSuperSO8OptiMOSTM5 Power-Transistor, 80 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. Rec. 100% avalanche tested Superior thermal resistance N-channel, logic level4 Qualified according to JEDEC1) for target applications132 2 Pb-free lead plating; RoHS compliant3 14 Halogen-free according
bsc025n03ms.pdf
BSC025N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryV 30 VFeatures DSR V =10 V 2.5mDS(on),max GS Optimized for 5V driver application (Notebook, VGA, POL)V =4.5 V 3GS Low FOMSW for High Frequency SMPSI 100 AD 100% avalanche tested N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (
bsc025n03msg.pdf
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bsc025n03ls.pdf
BSC025N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDS Fast switching MOSFET for SMPS R 2.5mDS(on),max Optimized technology for DC/DC converters I 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Super
bsc025n03lsg.pdf
BSC025N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDS Fast switching MOSFET for SMPS R 2.5mDS(on),max Optimized technology for DC/DC converters I 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Super
bsc025n03ls .pdf
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Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918