BSC025N08LS5 Datasheet and Replacement
Type Designator: BSC025N08LS5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10.3 nS
Cossⓘ - Output Capacitance: 840 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
Package: SUPERSO8
BSC025N08LS5 substitution
BSC025N08LS5 Datasheet (PDF)
bsc025n08ls5.pdf

BSC025N08LS5MOSFETSuperSO8OptiMOSTM5 Power-Transistor, 80 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. Rec. 100% avalanche tested Superior thermal resistance N-channel, logic level4 Qualified according to JEDEC1) for target applications132 2 Pb-free lead plating; RoHS compliant3 14 Halogen-free according
bsc025n03ms.pdf

BSC025N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryV 30 VFeatures DSR V =10 V 2.5mDS(on),max GS Optimized for 5V driver application (Notebook, VGA, POL)V =4.5 V 3GS Low FOMSW for High Frequency SMPSI 100 AD 100% avalanche tested N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (
bsc025n03msg.pdf

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bsc025n03ls.pdf

BSC025N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDS Fast switching MOSFET for SMPS R 2.5mDS(on),max Optimized technology for DC/DC converters I 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Super
Datasheet: AUIRF7759L2TR , AUIRF7769L2TR , AUIRF7799L2TR , AUIRF8736M2TR , AUIRF8739L2TR , AUIRFSA8409-7P , BF999 , BSC012N06NS , 4435 , BSC027N10NS5 , BSC037N08NS5T , BSC079N03LSCG , BSC220N20NSFD , BSG0810NDI , BSZ018NE2LSI , BSZ068N06NS , BSZ100N06NS .
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