IPB180N08S4-02 Todos los transistores

 

IPB180N08S4-02 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPB180N08S4-02

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 277 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 180 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 3435 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0022 Ohm

Encapsulados: TO263-7

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IPB180N08S4-02 datasheet

 ..1. Size:201K  infineon
ipb180n08s4-02.pdf pdf_icon

IPB180N08S4-02

IPB180N08S4-02 OptiMOS -T2 Power-Transistor Product Summary V 80 V DS R 2.2 mW DS(on),max I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Ultra high ID Type Package Marking IPB180N08

 6.1. Size:351K  infineon
ipb180n04s4-00.pdf pdf_icon

IPB180N08S4-02

IPB180N04S4-00 OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS(on) 0.98 mW ID 180 A Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-00 PG-TO263-7-3 4N0400 Maxim

 6.2. Size:161K  infineon
ipb180n03s4l-h0 ipb180n03s4l-h0 ds 1 0.pdf pdf_icon

IPB180N08S4-02

IPB180N03S4L-H0 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 0.95 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N03S4L-H0 PG-TO263-7-3 4N

 6.3. Size:176K  infineon
ipb180n06s4-h1 ipb180n06s4-h1 ds 10.pdf pdf_icon

IPB180N08S4-02

IPB180N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 1.7 m DS(on),max I 180 A D Features PG-TO263-7-3 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Ultra high ID Type Package Marking IPB180N0

Otros transistores... IPB015N04N6 , IPB08CN10NG , IPB100N12S3-05 , IPB120N10S4-03 , IPB120N10S4-05 , IPB120P04P4L-03 , IPB180N04S4L-01 , IPB180N04S4L-H0 , IRFP460 , IPB180N10S4-02 , IPB180N10S4-03 , IPB180P04P4-03 , IPB180P04P4L-02 , IPB240N03S4L-R8 , IPB240N04S4-1R0 , IPB240N04S4-R9 , IPB35N10S3L-26 .

History: IPB048N15N5LF | AP10TN003I

 

 

 

 

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