IPB180N08S4-02 PDF and Equivalents Search

 

IPB180N08S4-02 Specs and Replacement


   Type Designator: IPB180N08S4-02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 277 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 3435 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: TO263-7
 

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IPB180N08S4-02 datasheet

 ..1. Size:201K  infineon
ipb180n08s4-02.pdf pdf_icon

IPB180N08S4-02

IPB180N08S4-02 OptiMOS -T2 Power-Transistor Product Summary V 80 V DS R 2.2 mW DS(on),max I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Ultra high ID Type Package Marking IPB180N08... See More ⇒

 6.1. Size:351K  infineon
ipb180n04s4-00.pdf pdf_icon

IPB180N08S4-02

IPB180N04S4-00 OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS(on) 0.98 mW ID 180 A Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-00 PG-TO263-7-3 4N0400 Maxim... See More ⇒

 6.2. Size:161K  infineon
ipb180n03s4l-h0 ipb180n03s4l-h0 ds 1 0.pdf pdf_icon

IPB180N08S4-02

IPB180N03S4L-H0 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 0.95 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N03S4L-H0 PG-TO263-7-3 4N... See More ⇒

 6.3. Size:176K  infineon
ipb180n06s4-h1 ipb180n06s4-h1 ds 10.pdf pdf_icon

IPB180N08S4-02

IPB180N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 1.7 m DS(on),max I 180 A D Features PG-TO263-7-3 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Ultra high ID Type Package Marking IPB180N0... See More ⇒

Detailed specifications: IPB015N04N6 , IPB08CN10NG , IPB100N12S3-05 , IPB120N10S4-03 , IPB120N10S4-05 , IPB120P04P4L-03 , IPB180N04S4L-01 , IPB180N04S4L-H0 , IRFP460 , IPB180N10S4-02 , IPB180N10S4-03 , IPB180P04P4-03 , IPB180P04P4L-02 , IPB240N03S4L-R8 , IPB240N04S4-1R0 , IPB240N04S4-R9 , IPB35N10S3L-26 .

History: PH3030AL

Keywords - IPB180N08S4-02 MOSFET specs

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