IPB180P04P4L-02 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPB180P04P4L-02

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 180 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 28 nS

Cossⓘ - Capacitancia de salida: 4570 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0024 Ohm

Encapsulados: TO263-7

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IPB180P04P4L-02 datasheet

 0.1. Size:172K  infineon
ipb180p04p4l-02.pdf pdf_icon

IPB180P04P4L-02

Final Data Sheet IPB180P04P4L-02 OptiMOS -P2 Power-Transistor Product Summary V -40 V DS R 2.4 mW DS(on),max I -180 A D Features PG-TO263-7-3 P-channel - Logic Level - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Drain Intended for reverse battery pro

 3.1. Size:313K  infineon
ipb180p04p4-03.pdf pdf_icon

IPB180P04P4L-02

Final Data Sheet IPB180P04P4-03 OptiMOS -P2 Power-Transistor Product Summary VDS -40 V RDS(on) 2.8 mW ID -180 A Features P-channel - Normal Level - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested Drain Pin 4, Tab Gate Pin 1 Source Pi

 8.1. Size:256K  infineon
ipb180n10s4-03.pdf pdf_icon

IPB180P04P4L-02

IPB180N10S4-03 OptiMOSTM-T2 Power-Transistor Product Summary VDS 100 V RDS(on) 3.3 mW ID 180 A Features N-channel - Normal Level - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB180N10S4-03 PG-TO263-7-3 4N1003 Maximum ratin

 8.2. Size:351K  infineon
ipb180n04s4-00.pdf pdf_icon

IPB180P04P4L-02

IPB180N04S4-00 OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS(on) 0.98 mW ID 180 A Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-00 PG-TO263-7-3 4N0400 Maxim

Otros transistores... IPB120N10S4-05, IPB120P04P4L-03, IPB180N04S4L-01, IPB180N04S4L-H0, IPB180N08S4-02, IPB180N10S4-02, IPB180N10S4-03, IPB180P04P4-03, IRLZ44N, IPB240N03S4L-R8, IPB240N04S4-1R0, IPB240N04S4-R9, IPB35N10S3L-26, IPB50N12S3L-15, IPB60R040CFD7, IPB60R045P7, IPB60R070CFD7