IPB180P04P4L-02 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPB180P04P4L-02
Marking Code: 4QP04L02
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 180 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 220 nC
trⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 4570 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
Package: TO263-7
IPB180P04P4L-02 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPB180P04P4L-02 Datasheet (PDF)
ipb180p04p4l-02.pdf
Final Data Sheet IPB180P04P4L-02OptiMOS-P2 Power-TransistorProduct SummaryV -40 VDSR 2.4mWDS(on),maxI -180 ADFeaturesPG-TO263-7-3 P-channel - Logic Level - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedDrain Intended for reverse battery pro
ipb180p04p4-03.pdf
Final Data Sheet IPB180P04P4-03OptiMOS-P2 Power-TransistorProduct Summary VDS -40 V RDS(on) 2.8 mW ID -180 A Features P-channel - Normal Level - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche testedDrain Pin 4, Tab Gate Pin 1 Source Pi
ipb180n10s4-03.pdf
IPB180N10S4-03OptiMOSTM-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on) 3.3mWID 180 AFeatures N-channel - Normal Level - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB180N10S4-03 PG-TO263-7-3 4N1003Maximum ratin
ipb180n04s4-00.pdf
IPB180N04S4-00OptiMOS-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on) 0.98mWID 180 AFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N04S4-00 PG-TO263-7-3 4N0400Maxim
ipb180n03s4l-h0 ipb180n03s4l-h0 ds 1 0.pdf
IPB180N03S4L-H0OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 0.95mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N03S4L-H0 PG-TO263-7-3 4N
ipb180n08s4-02.pdf
IPB180N08S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 80 VDSR 2.2mWDS(on),maxI 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Ultra high IDType Package MarkingIPB180N08
ipb180n10s4-02.pdf
IPB180N10S4-02OptiMOSTM-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on) 2.5mID 180 AFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB180N10S4-02 PG-TO263-7-3 4N1002Maximum ratings, at T =25
ipb180n06s4-h1 ipb180n06s4-h1 ds 10.pdf
IPB180N06S4-H1OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 1.7mDS(on),maxI 180 ADFeaturesPG-TO263-7-3 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Ultra high IDType Package MarkingIPB180N0
ipb180n04s4-00 ds 1 0.pdf
IPB180N04S4-00OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 0.98mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N04S4-00 PG-TO263-7-3 4N040
ipb180n04s4-h0 ipb180n04s4-h0 ds 1 0.pdf
IPB180N04S4-H0OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 1.1mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N04S4-H0 PG-TO263-7-3 4N04H0
ipb180n04s4l-01.pdf
Data Sheet IPB180N04S4L-01OptiMOSTM-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on) 1.2mID 180 AFeatures N-channel Logic Level - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB180N04S4L-01 PG-TO263-7-3 4N04L01Ma
ipb180n04s4l-h0.pdf
Data Sheet IPB180N04S4L-H0OptiMOSTM-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on) 1.0mID 180 AFeatures N-channel Logic Level - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB180N04S4L-H0 PG-TO263-7-3 4N04LH0Ma
ipb180n04s3-02 ipb180n04s3-02 ds 1 0.pdf
IPB180N04S3-02OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR 1.5mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType MarkingPackageIPB180N04S3-02 PG-
ipb180n04s4-01 ipb180n04s4-01 ds 1 0.pdf
IPB180N04S4-01OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 1.3mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N04S4-01 PG-TO263-7-3 4N0401
ipb180n03s4l-01 ipb180n03s4l-01 ds 1 0.pdf
IPB180N03S4L-01OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 1.05mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N03S4L-01 PG-TO263-7-3 4N
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: BRD15N10 | STD3N30LT4
History: BRD15N10 | STD3N30LT4
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918